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參數(shù)資料
| 型號： | SI6421DQ-T1 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 7500 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | TSSOP-8 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大小： | 98K |
| 代理商： | SI6421DQ-T1 |
Document Number: 91000
www.vishay.com
Revision: 18-Jul-08
1
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All product specifications and data are subject to change without notice.
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PDF描述 |
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| SI6882EDQ-T1 | 6000 mA, 24 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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| SIG-21-S2.0 | STAINLESS STEEL, WIRE TERMINAL |
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| SIL05-1A31-71L | DRY REED RELAY, SPST, MOMENTARY, 0.062A (COIL), 5VDC (COIL), 312mW (COIL), 2A (CONTACT), 500VDC (CONTACT), THROUGH HOLE-STRAIGHT MOUNT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI6423DQ | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 12-V (D-S) MOSFET |
| SI6423DQ_05 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 12-V (D-S) MOSFET |
| SI6423DQ-T1-E3 | 功能描述:MOSFET 12V 9.5A 1.5W 8.5mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6423DQ-T1-GE3 | 功能描述:MOSFET 12V 9.5A 1.5W 8.5mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6426 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:20V N-Channel PowerTrench MOSFET |
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