參數(shù)資料
型號(hào)： SI6421DQ-T1
廠商： VISHAY SILICONIX
元件分類(lèi)： 小信號(hào)晶體管
英文描述： 7500 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： TSSOP-8
文件頁(yè)數(shù)： 1/6頁(yè)
文件大小： 98K
代理商： SI6421DQ-T1
Vishay Siliconix
Si6421DQ
New Product
Document Number: 72125
S-60422-Rev. B, 20-Mar-06
www.vishay.com
1
P-Channel 12-V (D-S) MOSFET
FEATURES
TrenchFET Power MOSFET
APPLICATIONS
Load Switch
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)ID (A)
- 12
0.0105 at VGS = - 4.5 V
- 9.5
0.0135 at VGS = - 2.5 V
- 8.5
0.0175 at VGS = - 1.8 V
- 7.3
Si6421DQ
D
S
G
1
2
3
4
8
7
6
5
D
S
D
TSSOP-8
Top View
Ordering Information: Si6421DQ-T1
Si6421DQ-T1-E3 (Lead (Pb)-free)
S*
G
D
P-Channel MOSFET
* Source Pins 2, 3, 6 and 7
must be tied common.
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 sec
Steady State
Unit
Drain-Source Voltage
VDS
- 12
V
Gate-Source Voltage
VGS
± 8
Continuous Drain Current (TJ = 150 °C)
a
TA = 25 °C
ID
- 9.5
- 7.5
A
TA = 70 °C
- 7.5
- 6
Pulsed Drain Current (10 s Pulse Width)
IDM
- 30
Continuous Source Current (Diode Conduction)a
IS
- 1.5
- 0.95
Maximum Power Dissipationa
TA = 25 °C
PD
1.75
1.08
W
TA = 70 °C
1.14
0.69
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t
≤ 10 sec
RthJA
55
70
°C/W
Steady State
95
115
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
38
50
Available
Pb-free
RoHS*
COMPLIANT
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