參數(shù)資料
型號: SI4886DY
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel Reduced Qg, Fast Switching MOSFET
中文描述: N溝道減少Q(mào)g和,快速開關(guān)MOSFET
文件頁數(shù): 4/4頁
文件大?。?/td> 57K
代理商: SI4886DY
Si4886DY
Vishay Siliconix
New Product
www.vishay.com FaxBack 408-970-5600
2-4
Document Number: 71142
S-00206—Rev. A, 21-Feb-00
–0.8
–0.6
–0.4
–0.2
–0.0
0.2
0.4
–50
–25
0
25
50
75
100
125
150
I
D
= 250 A
Threshold Voltage
V
V
G
T
J
– Temperature ( C)
10
–3
10
–2
1
10
600
10
–1
10
–4
100
0.01
0
1
50
60
20
30
10
30
0.1
Single Pulse Power
Time (sec)
10
40
P
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
N
T
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 68 C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
t
1
t
2
Notes:
P
DM
10
–3
10
–2
1
10
10
–1
10
–4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
N
T
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SI4886DY-T1 功能描述:MOSFET 30V 13A 2.95W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4886DY-T1-E3 功能描述:MOSFET 30V 13A 2.95W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4886DY-T1-GE3 功能描述:MOSFET 30V 13A 2.95W 10mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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