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參數(shù)資料
| 型號(hào)： | SI4886DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Reduced Qg, Fast Switching MOSFET |
| 中文描述： | N溝道減少Q(mào)g和，快速開(kāi)關(guān)MOSFET |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 57K |
| 代理商： | SI4886DY |
Si4886DY
Vishay Siliconix
New Product
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 71142
S-00206—Rev. A, 21-Feb-00
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.80
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V
1
A
V
DS
= 24 V, V
GS
= 0 V, T
J
= 70 C
5
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10
V
40
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10
V, I
D
= 13 A
0.0078
0.010
V
GS
= 4.5 V, I
D
= 11 A
0.0105
0.0135
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 13 A
38
S
Diode Forward Voltage
a
V
SD
I
S
= 2.6 A, V
GS
= 0 V
0.74
1.1
V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= 15 V V
V
GS
= 5.0 V, I
D
= 13 A
5 0 V I
14.5
20
Gate-Source Charge
Q
gs
3.2
nC
Gate-Drain Charge
Q
gd
4.3
Turn-On Delay Time
t
d(on)
V
= 15 V, R
= 15
1 A V
1 A, V
GEN
= 10 V, R
G
= 6
15 V R
14
20
Rise Time
t
r
I
D
10 V R
5
10
Turn-Off Delay Time
t
d(off)
42
80
ns
Fall Time
t
f
18
30
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.6 A, di/dt = 100 A/ s
40
70
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
0
10
20
30
40
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
10
20
30
40
50
0
2
4
6
8
10
V
GS
= 10 thru 4 V
25 C
T
C
= 125 C
1 V
–55 C
3 V
Output Characteristics
Transfer Characteristics
V
DS
– Drain-to-Source Voltage (V)
–
I
D
V
GS
– Gate-to-Source Voltage (V)
–
I
D
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| SI4886DY-E3 | 功能描述:MOSFET 30V 13A 2.95W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4886DY-T1 | 功能描述:MOSFET 30V 13A 2.95W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4886DY-T1-E3 | 功能描述:MOSFET 30V 13A 2.95W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4886DY-T1-GE3 | 功能描述:MOSFET 30V 13A 2.95W 10mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4888DY | 功能描述:MOSFET 30V 16A 3.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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