參數(shù)資料
型號(hào): Si4511DY-T1
廠商: Vishay Intertechnology,Inc.
英文描述: Paired Cable; Number of Conductors:18; Conductor Size AWG:22; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:9; Voltage Nom.:300V RoHS Compliant: Yes
中文描述: N和P溝道20 - V(下局副局長(zhǎng))MOSFET的
文件頁(yè)數(shù): 8/8頁(yè)
文件大?。?/td> 77K
代理商: SI4511DY-T1
Si4511DY
Vishay Siliconix
www.vishay.com
8
Document Number: 72223
S-41496—Rev. B, 09-Aug-04
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
P-CHANNEL
10
3
10
2
1
10
10
1
10
4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
N
T
Single Pulse
相關(guān)PDF資料
PDF描述
SI4511DY P-Channel 20-V (D-S) MOSFET,Low-Threshold
Si4511DY-E3 P-Channel 20-V (D-S) MOSFET,Low-Threshold
Si4511DY-T1-E3 P-Channel 20-V (D-S) MOSFET,Low-Threshold
SI4702DY Load Switch with Level-Shift
SI4702DY-T1 Load Switch with Level-Shift
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4511DY-T1-E3 功能描述:MOSFET +20/-20V +9.6/-6.2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4511DY-T1-GE3 功能描述:MOSFET 20V 9.6/6.2A 2.0W 14.5/33mohm@10/4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4532ADY 功能描述:MOSFET 30V 4.9/3.9A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4532ADY 制造商:Vishay Siliconix 功能描述:MOSFET DUAL NP SO-8
SI4532ADY-E3 功能描述:MOSFET 30V 4.9/3.9A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube