參數(shù)資料
型號: Si4442DY
廠商: National Semiconductor Corporation
英文描述: N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages
中文描述: N溝道場效應(yīng)管同步降壓穩(wěn)壓控制器輸出電壓低
文件頁數(shù): 16/22頁
文件大小: 602K
代理商: SI4442DY
Example Circuits
(Continued)
The circuits in
Figure 6
are intended for ADSL applications,
where the high switching frequency keeps noise out of the
data transmission range. In this design, the 1.8 and 3.3V
outputs come up simultaneously by using the same softstart
capacitor. Because two current sources now charge the
same capacitor, the capacitance must be doubled to achieve
the same softstart time. (Here, 40nF is used to achieve a
5ms softstart time.) A common softstart capacitor means
that, should one circuit enter current limit, the other circuit
will also enter current limit. In addition, if both circuits are
built with the LM2727, a UVP or OVP fault on one circuit will
cause both circuits to latch off. The additional compensation
components Rc2 and Cc3 are needed for the low ESR, all
ceramic output capacitors, and the wide (3x) range of Vin.
20049407
FIGURE 6. 1.8V and 3.3V, 1A, 1.4MHz, Simultaneous
L
www.national.com
16
相關(guān)PDF資料
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SIDC03D60C6 Fast switching diode chip in EMCON 3 -Technology
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4442DY-E3 功能描述:MOSFET 30V 22A 3.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4442DY-T1 功能描述:MOSFET 30V 22A 3.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4442DY-T1-E3 功能描述:MOSFET 30V 22A 3.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4442DY-T1-GE3 功能描述:MOSFET 30V 22A 3.5W 4.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4446DY 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 40-V (D-S) MOSFET