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參數(shù)資料
| 型號(hào)： | Si4442DY |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages |
| 中文描述： | N溝道場效應(yīng)管同步降壓穩(wěn)壓控制器輸出電壓低 |
| 文件頁數(shù)： | 14/22頁 |
| 文件大?。?/td> | 602K |
| 代理商： | SI4442DY |
Example Circuits
(Continued)
This circuit design, detailed in the Design Considerations
section, uses inexpensive aluminum capacitors and off-the-
shelf inductors. It can deliver 10A at better than 85% effi-
ciency. Large bulk capacitance on input and output ensure
stable operation.
The example circuit of
Figure 4
has been designed for
minimum component count and overall solution size. A
switching frequency of 600kHz allows the use of small input/
output capacitors and a small inductor. The availability of
separate 5V and 12V supplies (such as those available from
desk-top computer supplies) and the low current further
reduce component count. Using the 12V supply to power the
MOSFET drivers eliminates the bootstrap diode, D1. At low
currents, smaller FETs or dual FETs are often the most
efficient solutions. Here, the Si4826DY, an asymmetric dual
FET in an SO-8 package, yields 92% efficiency at a load of
2A.
20049404
FIGURE 3. 5V to 1.2V, 10A, 300kHz
20049405
FIGURE 4. 5V to 1.8V, 3A, 600kHz
L
www.national.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4442DY-E3 | 功能描述:MOSFET 30V 22A 3.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4442DY-T1 | 功能描述:MOSFET 30V 22A 3.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4442DY-T1-E3 | 功能描述:MOSFET 30V 22A 3.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4442DY-T1-GE3 | 功能描述:MOSFET 30V 22A 3.5W 4.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4446DY | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 40-V (D-S) MOSFET |
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