參數(shù)資料
型號： Si4442DY
廠商： National Semiconductor Corporation
英文描述： N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages
中文描述： N溝道場效應(yīng)管同步降壓穩(wěn)壓控制器輸出電壓低
文件頁數(shù)： 13/22頁
文件大?。?/td> 602K
代理商： SI4442DY
Application Information
(Continued)
FET Conduction Loss
P
Cn
= 0.533W
Input Capacitor Loss
4.28
2
*0.018/2 = 0.084W
Input Inductor Loss
P
Lin
= I
2in
* DCR
input-L
2.82
2
*0.007 = 0.055W
Output Inductor Loss
P
Lout
= I
2o
* DCR
output-L
10
2
*0.004 = 0.4W
System Efficiency
Example Circuits
This circuit and the one featured on the front page have been
designed to deliver high current and high efficiency in a small
package, both in area and in height The tallest component in
this circuit is the inductor L1, which is 6mm tall. The com-
pensation has been designed to tolerate input voltages from
5 to 16V.
20049403
FIGURE 2. 5V-16V to 3.3V, 10A, 300kHz
L
www.national.com
13
相關(guān)PDF資料
PDF描述
SIDC03D60C6 Fast switching diode chip in EMCON 3 -Technology
SIDC03D60F6 Fast switching diode chip in EMCON-Technology
SIDC04D60F6 Fast switching diode chip in EMCON-Technology
SIDC06D120E6 Fast switching diode chip in EMCON-Technology
SIDC06D60AC6 Fast switching diode chip in EMCON 3 -Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4442DY-E3 功能描述:MOSFET 30V 22A 3.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4442DY-T1 功能描述:MOSFET 30V 22A 3.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4442DY-T1-E3 功能描述:MOSFET 30V 22A 3.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4442DY-T1-GE3 功能描述:MOSFET 30V 22A 3.5W 4.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4446DY 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 40-V (D-S) MOSFET
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