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參數資料
| 型號： | Si4362DY-T1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Paired Cable; Number of Conductors:6; Conductor Size AWG:22; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:3; Leaded Process Compatible:Yes; Voltage Nom.:300V RoHS Compliant: Yes |
| 中文描述： | N溝道30 V的（副）MOSFET的 |
| 文件頁數： | 3/4頁 |
| 文件大?。?/td> | 51K |
| 代理商： | SI4362DY-T1 |
Si4362DY
Vishay Siliconix
Document Number: 71628
S-40762—Rev. E, 19-Apr-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0.000
0.002
0.004
0.006
0.008
0.010
0
10
20
30
40
50
0
1
2
3
4
5
0
10
20
30
40
50
0.6
0.8
1.0
1.2
1.4
1.6
50
25
0
25
50
75
100
125
150
C
rss
V
DS
= 15 V
I
D
= 20 A
V
GS
= 10 V
I
D
V
GS
= 10 V
Gate Charge
On-Resistance vs. Drain Current
Q
g
Total Gate Charge (nC)
V
DS
Drain-to-Source Voltage (V)
C
V
G
r
D
)
I
D
Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
T
J
Junction Temperature ( C)
V
GS
= 4.5 V
1.0
1.2
0.000
0.005
0.010
0.015
0.020
0.025
0
2
4
6
8
10
1
10
50
I
D
= 20 A
0.00
0.2
0.4
0.6
0.8
T
J
= 25 C
T
J
= 150 C
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
r
D
)
V
SD
Source-to-Drain Voltage (V)
V
GS
Gate-to-Source Voltage (V)
I
S
0
2000
4000
6000
8000
0
6
12
18
24
30
C
oss
C
iss
r
D
(
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|---|---|
| Si4362DY-T1E3 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4362DY | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| Si4362DY-E3 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SI4362DY-T1E3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI4362DY-T1-E3 | 功能描述:MOSFET 30 Volt 20 Amp 3.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4364DY | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI4364DY-T1 | 功能描述:MOSFET 30V 20A 1.6W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4364DY-T1-E3 | 功能描述:MOSFET 30V 20A 1.6W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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