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參數(shù)資料
| 型號： | Si4362DY-T1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Paired Cable; Number of Conductors:6; Conductor Size AWG:22; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:3; Leaded Process Compatible:Yes; Voltage Nom.:300V RoHS Compliant: Yes |
| 中文描述： | N溝道30 V的（副）MOSFET的 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 51K |
| 代理商： | SI4362DY-T1 |
Si4362DY
Vishay Siliconix
www.vishay.com
2
Document Number: 71628
S-40762—Rev. E, 19-Apr-04
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.6
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
12 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
1
A
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 C
5 V, V
GS
= 10
V
5
On-State Drain Current
a
I
D(on)
V
DS
30
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10
V, I
D
= 20 A
0.0035
0.0045
V
GS
= 4.5 V, I
D
= 19 A
0.0042
0.0055
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 20 A
90
S
Diode Forward Voltage
a
V
SD
I
S
= 2.9 A, V
GS
= 0 V
0.75
1.1
V
Dynamic
b
Total Gate Charge
Q
g
42
55
Gate-Source Charge
Q
gs
V
DS
= 15 V,
V
GS
= 4.5 V, I
D
= 20 A
12.8
nC
Gate-Drain Charge
Q
gd
7.7
Gate Resistance
R
G
0.5
1.3
2.2
Turn-On Delay Time
t
d(on)
17
30
Rise Time
t
r
V
= 15 V, R
= 15
1 A, V
GEN
= 10 V, R
g
= 6
14
25
Turn-Off Delay Time
t
d(off)
I
D
158
230
ns
Fall Time
t
f
43
65
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.9 A, di/dt = 100 A/ s
50
80
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
10
20
30
40
50
60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
10
20
30
40
50
60
0
2
4
6
8
10
V
GS
= 10 thru 3 V
25 C
T
C
= 125 C
55 C
2 V
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
I
D
V
GS
Gate-to-Source Voltage (V)
I
D
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4362DY-T1E3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI4362DY-T1-E3 | 功能描述:MOSFET 30 Volt 20 Amp 3.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4364DY | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI4364DY-T1 | 功能描述:MOSFET 30V 20A 1.6W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4364DY-T1-E3 | 功能描述:MOSFET 30V 20A 1.6W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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