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參數資料
| 型號： | SI3905DV |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual P-Channel 8-V (D-S) MOSFET |
| 中文描述： | 雙P溝道8 - V（下局副局長）MOSFET的 |
| 文件頁數： | 2/5頁 |
| 文件大?。?/td> | 77K |
| 代理商： | SI3905DV |
Si3905DV
Vishay Siliconix
New Product
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 70973
S-61840—Rev. A, 13-Sep-99
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= –250 A
–0.45
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8
V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –6.4 V, V
GS
= 0 V
–1
A
V
DS
= –6.4 V, V
GS
= 0 V, T
J
= 55 C
–5
On-State Drain Current
a
I
D(on)
V
DS
=
–5 V, V
GS
= –4.5 V
–5
A
D i S
Drain-Source On-State Resistance
O S
a
V
GS
= –4.5 V, I
D
= –2.5 A
0.103
0.125
r
DS(on)
V
GS
= –2.5 V, I
D
= –2.0
A
0.146
0.175
V
GS
= –1.8 V, I
D
= –1
A
0.205
0.265
Forward Transconductance
a
g
fs
V
DS
= –4.5
V, I
D
= –2.5 A
5.3
S
Diode Forward Voltage
a
V
SD
I
S
= –1.05 A, V
GS
= 0 V
–0.79
–1.1
V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= –5 V V
V
GS
= –4.5 V, I
D
= –2.5 A
4 5 V I
2 5 A
4.2
6
Gate-Source Charge
Q
gs
0.45
nC
Gate-Drain Charge
Q
gd
0.90
Turn-On Delay Time
t
d(on)
V
= –5 ,
= 5
1 A V
–1 A, V
GEN
= –4.5 V, R
G
= 6
5
10
15
Rise Time
t
r
I
D
4 5 V R
47
70
ns
Turn-Off Delay Time
t
d(off)
28
45
Fall Time
t
f
34
50
Source-Drain Reverse Recovery Time
t
rr
I
F
= –1.05 A, di/dt = 100 A/ s
20
40
ns
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SI3905DV-T1 | 功能描述:MOSFET 8V 2.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3905DV-T1-E3 | 功能描述:MOSFET 8V 2.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3905DV-T1-GE3 | 功能描述:MOSFET 8.0V 2.5A 1.15W 125mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3909DV | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 20-V (D-S) MOSFET |
| SI3909DV-T1 | 功能描述:MOSFET 20V 1.8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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