參數(shù)資料
型號(hào): SI3200-KS
廠商: Silicon Laboratories Inc
文件頁(yè)數(shù): 76/128頁(yè)
文件大小: 0K
描述: IC LINEFEED INTRFC 100V 16SOIC
標(biāo)準(zhǔn)包裝: 48
系列: ProSLIC®
功能: 用戶線路接口概念(SLIC),CODEC
接口: GCI,PCM,SPI
電路數(shù): 2
電源電壓: 3.3V,5V
電流 - 電源: 110µA
功率(瓦特): 941mW
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 16-SOIC(0.154",3.90mm Width)裸露焊盤(pán)
供應(yīng)商設(shè)備封裝: 16-SOIC N
包裝: 管件
包括: 電池切換,BORSCHT 功能,DTMF 生成和解碼,F(xiàn)SK 音調(diào)生成,調(diào)制解調(diào)器和傳真音調(diào)檢測(cè)
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)當(dāng)前第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)第88頁(yè)第89頁(yè)第90頁(yè)第91頁(yè)第92頁(yè)第93頁(yè)第94頁(yè)第95頁(yè)第96頁(yè)第97頁(yè)第98頁(yè)第99頁(yè)第100頁(yè)第101頁(yè)第102頁(yè)第103頁(yè)第104頁(yè)第105頁(yè)第106頁(yè)第107頁(yè)第108頁(yè)第109頁(yè)第110頁(yè)第111頁(yè)第112頁(yè)第113頁(yè)第114頁(yè)第115頁(yè)第116頁(yè)第117頁(yè)第118頁(yè)第119頁(yè)第120頁(yè)第121頁(yè)第122頁(yè)第123頁(yè)第124頁(yè)第125頁(yè)第126頁(yè)第127頁(yè)第128頁(yè)
Si3232
Preliminary Rev. 0.96
51
Not
Recommended
fo
r N
ew
D
esi
gn
s
The pulldown resistor on the SDO pin is required to
allow this node to discharge after a logic high state to a
tri-state condition. The discharge occurs while SDO is
tri-stated during an 8 kHz transmission frame. The value
of the pulldown resistor depends on the capacitance
seen on the SDO pin. In the case of using a single
Si3232, the value of the pulldown resistor is 39 k
. This
assumes a 5 pF SDO pin capacitance and about a
15 pF load on the SDO pin. For applications using
multiple Si3232 devices or different capacitive loads on
the SDO pin, a different pulldown resistance needs to
be calculated.
The following design procedure is an example for
calculating the pulldown resistor on the SDO pin in a
system using eight Si3232 devices. A pullup resistor is
not allowed on the SDO pin.
1. The SDO node must discharge and remain discharged for
244 ns. The discharge occurs during the Hi-Z state;
therefore, the time to discharge is equal to the time in Hi-Z
time minus the 244 ns.
2. Allow five time constants for discharge where the
time constant, t = RC
3. SDO will be in Hi-Z while SDI is sending control and
address which are each 8 bits. Using the maximum
SCLK frequency of 16.13 MHz, the SDO will be in
Hi-Z for 16 / 16.13 MHz = 992 ns.
4. We want to discharge and remain discharged for
244 ns. Therefore, the discharge time is:
992 ns – 244 ns = 748 ns
5. To allow for some margin, let’s discharge in 85% of
this time. 748nS x 85% = 635.8 ns
6. Determine capacitive load on the SDO pin:
a.Allow 5 pF for each Si3220 SDO pin that
connected together.
b.Allow ~2 pF/inch (~0.8 pF/cm) for PCB trace.
c.Include the load capacitance of the host IC input.
7. For a system with eight Si3220 devices, the
capacitance seen on the SDO pin would be:
a.8 x 5 pF for each Si3220 = 40 pF
b.Assume 5 inch of PCB trace: 5inch x 2 pF/
inch = 10 pF
c.Host IC input of 5 pF
d.Total capacitance is 55 pF
8. Using the equation t = RC, allowing five time
constants to decay, and solving for R
a.R = t / 5C = 635.8 ns / (5 x 55 pF)
b.R = 2.3 k
So, R must be less than 2.3 k
to allow the node to
discharge.
Table 31. SPI Control Interface
7
BRDCST
Indicates a broadcast operation that is intended for all devices in the daisy chain. This is
only valid for write operations since it would cause contention on the SDO pin during a
read.
6R/W
Read/Write Bit.
0 = Write operation.
1 = Read operation.
5
REG/RAM Register/RAM Access.
0 = RAM access.
1 = Register access.
4
Reserved
3:0
CID[3:0]
This field indicates the channel that is targeted by the operation. The 4-bit channel value is
provided LSB first. The devices reside on the daisy chain such that device 0 is nearest to
the controller, and device 15 is furthest down the SDI/SDU_THRU chain. (See Figure 26.)
As the CID information propagates down the daisy chain, each channel decrements the
CID by 1. The SDI nodes between devices will reflect a decrement of 2 per device since
each device contains two channels. The device receiving a value of 0 in the CID field will
respond to the SPI transaction. (See Figure 27.) If a broadcast to all devices connected to
the chain is requested, the CID will not decrement. In this case, the same 8-bit or 16-bit
data is presented to all channels regardless of the CID values.
相關(guān)PDF資料
PDF描述
S9S12P96J0MLH MCU 128K FLASH AUTO 64-LQFP
SI3201-KS IC LINEFEED INTRFC SI321X 16SOIC
S9S12P128J0MFT MCU 128K FLASH AUTO 48-QFN
MC9S08DV48ACLF IC MCU 48K FLASH 2K RAM 48-LQFP
SI3232-FQ IC SLIC PROG DUAL-CH 64TQFP
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI3200-KSR 制造商:Silicon Laboratories Inc 功能描述:
SI3200-X-FS 制造商:未知廠家 制造商全稱:未知廠家 功能描述:DUAL PROGRAMMABLE CMOS SLIC WITH LINE MONITORING
SI3200-X-GS 制造商:未知廠家 制造商全稱:未知廠家 功能描述:DUAL PROGRAMMABLE CMOS SLIC WITH LINE MONITORING
Si3201-BS 功能描述:電信線路管理 IC 100V Linefeed Inter- face IC for Si321x RoHS:否 制造商:STMicroelectronics 產(chǎn)品:PHY 接口類型:UART 電源電壓-最大:18 V 電源電壓-最小:8 V 電源電流:30 mA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VFQFPN-48 封裝:Tray
SI3201-BSR 制造商:Silicon Laboratories Inc 功能描述: