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參數(shù)資料
| 型號： | SI2301DS-T1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 1.25-W, 2.5-V MOSFET |
| 中文描述： | P溝道1.25鎢，2.5 V的MOSFET的 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 39K |
| 代理商： | SI2301DS-T1 |
Si2301ADS
Vishay Siliconix
New Product
Document Number: 71835
S-20617—Rev. B, 29-Apr-02
www.vishay.com
1
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
b
0.130 @ V
GS
= –4.5 V
–2.0
–20
0.190 @ V
GS
= –2.5 V
–1.6
G
TO-236
(SOT-23)
S
D
Top View
2
3
1
Si2301DS (1A)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage
V
DS
–20
Gate-Source Voltage
V
GS
8
V
T
A
= 25 C
–2.0
–1.75
Continuous Drain Current
(T
J
= 150 C)
b
T
A
= 70 C
I
D
–1.6
–1.4
Pulsed Drain Current
a
I
DM
–10
A
Continuous Source Current (Diode Conduction)
b
I
S
–0.75
–0.6
T
A
= 25 C
0.9
0.7
Power Dissipation
b
T
A
= 70 C
P
D
0.57
0.45
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
b
115
140
Maximum Junction-to-Ambient
c
R
thJA
140
175
C/W
Notes
a.
b.
c.
Pulse width limited by maximum junction temperature.
Surface Mounted on FR4 Board, t
Surface Mounted on FR4 Board.
5 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
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