參數(shù)資料
型號(hào)： SI2303ADS
廠(chǎng)商： Vishay Intertechnology,Inc.
英文描述： P-Channel, 30-V (D-S) MOSFET
中文描述： P溝道，30 V的（副）MOSFET的
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 39K
代理商： SI2303ADS
Si2303ADS
Vishay Siliconix
New Product
Document Number: 71837
S-20617—Rev. B, 29-Apr-02
www.vishay.com
1
P-Channel, 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
b
0.240 @ V
GS
= –10 V
–1.4
–30
0.460 @ V
GS
= –4.5 V
–1.0
G
TO-236
(SOT-23)
S
D
Top View
2
3
1
Si2303DS (3A)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage
V
DS
–30
Gate-Source Voltage
V
GS
20
V
T
A
= 25 C
–1.4
–1.3
Continuous Drain Current
(T
J
= 150 C)
b
T
A
= 70 C
I
D
–1.1
–1.0
Pulsed Drain Current
a
I
DM
–10
A
Continuous Source Current (Diode Conduction)
b
I
S
–0.75
–0.6
T
A
= 25 C
0.9
0.7
Power Dissipation
b
T
A
= 70 C
P
D
0.57
0.45
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
b
115
140
Maximum Junction-to-Ambient
c
R
thJA
140
175
C/W
Notes
a.
b.
c.
Pulse width limited by maximum junction temperature.
Surface Mounted on FR4 Board, t
Surface Mounted on FR4 Board.
5 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI2303ADS-T1-E3 制造商:Vishay Intertechnologies 功能描述:MOSFET, On Resistance Rds(on):460mohm, Leaded Process Compatible:Yes, Mounting T
SI2303BDS 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:P-Channel, 30-V (D-S) MOSFET
SI2303BDS_08 制造商:SUMIDA 制造商全稱(chēng):Sumida Corporation 功能描述:P-Channel 30-V (D-S) MOSFET
SI2303BDS_RC 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:R-C Thermal Model Parameters
SI2303BDS-T1 功能描述:MOSFET 30V 1.64A 1.25W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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