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參數(shù)資料
| 型號： | SI2304 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | 40 AMP MINI-ISO AUTOMOTIVE RELAY |
| 中文描述： | N溝道增強型場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 73K |
| 代理商： | SI2304 |
Si2304BDS
Vishay Siliconix
New Product
Document Number: 72503
S-32412—Rev. B, 24-Nov-03
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
30
0.070 @ V
GS
= 10 V
3.2
0.105 @ V
GS
= 4.5 V
2.6
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Si2304BDS (L4)*
*Marking Code
Ordering Information: Si2304BDS-T1—E3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a, b
T
A
= 25 C
T
A
= 70 C
I
D
3.2
2.6
2.5
2.1
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
I
DM
I
S
10
0.9
0.62
Maximum Power Dissipation
a, b
T
A
= 25 C
T
A
= 70 C
P
D
1.08
0.75
W
0.69
0.48
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
5 sec
R
thJA
90
115
Steady State
130
166
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
60
75
Notes
a.
b.
c.
Surface Mounted on FR4 Board, t
Pulse width limited by maximum junction temperature.
Surface Mounted on FR4 Board.
5 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
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| SI2306DS-T1 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI2304BDS | 制造商:Vishay Siliconix 功能描述:MOSFET N SOT-23 |
| SI2304BDS_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI2304BDS-T1-E3 | 功能描述:MOSFET 30V 3.2A 0.07Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI2304BDS-T1-GE3 | 功能描述:MOSFET 30V 3.2A 1.08W 70mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI2304DDS | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
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