參數(shù)資料
型號: SHB601052E
廠商: SENSITRON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Silicon Carbide Single Phase Full Wave Bridge
中文描述: 10 A, SILICON, BRIDGE RECTIFIER DIODE, MO-078AA
封裝: HERMETIC SEALED, TO-258, 5 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 62K
代理商: SHB601052E
221 WEST INDUSTRY COURT
DEER PARK, NY 11729-4681
PHONE (631) 586-7600
FAX (631) 242-9798
World Wide Web - http://www.sensitron.com
E-mail Address - sales@sensitron.com
SENSITRON
Technical Data
Datasheet 4308 REV. B
Silicon Carbide Single Phase Full Wave Bridge
DESCRIPTION:
1200-VOLT, 5 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE
IN A HERMETIC 5-LEAD TO-258 (MO-078) PACKAGE
FEATURES:
NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
MAXIMUM RATINGS
ALL RATINGS ARE @ T
C
= 25
°
C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL
MAX.
UNITS
PEAK INVERSE VOLTAGE
PIV
1200
Volts
MAXIMUM DC OUTPUT CURRENT (With T
C
= 65
O
C) WHEN USED AS
A BRIDGE
I
O
10
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT
(t = 8.3ms, Sine) per leg, T
C
= 25
O
C
I
FRM
30
Amps
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
(t = 10
μ
s, pulse) per leg, T
C
= 25
O
C
I
FSM
100
Amps
MAXIMUM JUNCTION CAPACITANCE (V
r
=5V) per leg
C
J
450
pF
MAXIMUM POWER DISSIPATION, T
C
= 25
O
C
P
d
30
W
MAXIMUM THERMAL RESISTANCE, Junction to Case (Connected as a
BRIDGE)
R
θ
JC
1.0
°
C/W
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE
Top, Tstg
-55 to
+175
°
C
ELECTRICAL CHARACTERISTICS
SHB601052E
CHARACTERISTIC
TYP
MAX.
UNITS
MAXIMUM FORWARD VOLTAGE DROP (I
f
= 5 A PER LEG) V
f
T
J
=25
°
C
T
J
=150
°
C
MAXIMUM REVERSE CURRENT (1200V PIV PER LEG) I
r
T
J
= 25
°
C
T
J
= 150
°
C
TOTAL CAPACITANCE CHARGE (V
R
=1200V, I
F
=5A, di/dt=500A/
μ
s and
T
J
=25
°
C) Q
C
per leg
1.65
2.55
1.80
3.00
Volts
0.05
0.10
0.20
1.00
mA
28
N/A
nC
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