- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382503 > SHB601052FP (SENSITRON SEMICONDUCTOR) SILICON CARBIDE 3-PHASE HALF WAVE BRIDGE PDF資料下載
參數(shù)資料
| 型號： | SHB601052FP |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SILICON CARBIDE 3-PHASE HALF WAVE BRIDGE |
| 中文描述： | 3 PHASE, 5 A, SILICON CARBIDE, RECTIFIER DIODE, MO-078AA |
| 封裝： | HERMETIC SEALED, MO-078, TO-258, 5 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 63K |
| 代理商： | SHB601052FP |
221 WEST INDUSTRY COURT
DEER PARK, NY 11729-4681
PHONE (631) 586-7600
FAX (631) 242-9798
World Wide Web - http://www.sensitron.com
E-mail Address - sales@sensitron.com
SENSITRON
Technical Data
Datasheet 4290 REV. –
SILICON CARBIDE 3-PHASE HALF WAVE BRIDGE
DESCRIPTION:
1200-VOLT, 5 AMP POWER SILICON CARBIDE 3-PHASE HALF WAVE BRIDGE IN A
HERMETIC 5-PIN TO-258 (MO-078) PACKAGE.
FEATURES:
NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
MAXIMUM RATINGS
ALL RATINGS ARE @ T
C
= 25
°
C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL
MAX.
UNITS
PEAK INVERSE VOLTAGE
PIV
1200
Volts
MAXIMUM DC OUTPUT CURRENT (With T
C
= 65
O
C) PER LEG
I
O
5
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT
(t = 8.3ms, Sine) per leg, T
C
= 25
O
C
I
FRM
30
Amps
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
(t = 10
μ
s, pulse) per leg, T
C
= 25
O
C
I
FSM
100
Amps
MAXIMUM JUNCTION CAPACITANCE (V
r
=5V) per leg
C
T
450
pF
MAXIMUM POWER DISSIPATION, T
C
= 25
O
C
P
d
30
W
MAXIMUM THERMAL RESISTANCE, Junction to Case
R
θ
JC
1.2
°
C/W
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE
Top, Tstg
-55 to
+175
°
C
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
TYP
MAX.
UNITS
MAXIMUM FORWARD VOLTAGE DROP (I
f
= 5 A PER LEG) V
f
T
J
=25
°
C
T
J
=150
°
C
MAXIMUM REVERSE CURRENT (1200V PIV PER LEG) I
r
T
J
= 25
°
C
T
J
= 150
°
C
TOTAL CAPACITANCE CHARGE (V
R
=1200V, I
F
=5A, di/dt=500A/
μ
s and
T
J
=25
°
C) Q
C
per leg
1.65
2.55
1.80
3.00
Volts
0.05
0.10
0.20
1.00
mA
28
N/A
nC
Application Note: Customers should be aware that at the current stage of technical development of SiC, the reverse avalanche
capabilities of the device are limited.
Customer designs will need to accommodate these limitations and avoid exposure of the device to this and other potentially
damaging conditions in their applications.
SHB601052FP
SHB601052FN
相關PDF資料 |
PDF描述 |
|---|---|
| SHB601052G | SILICON CARBIDE 3-PHASE FULL WAVE BRIDGE |
| SHB601112E | SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE |
| SHB636053E | HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE |
| SHB645052E | HERMETIC QUAD SILICON CARBIDE RECTIFIER |
| SHB681123E | HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SHB601052FP_09 | 制造商:SENSITRON 制造商全稱:Sensitron 功能描述:SILICON CARBIDE 3-PHASE HALF WAVE BRIDGE |
| SHB601052G | 制造商:SENSITRON 制造商全稱:Sensitron 功能描述:SILICON CARBIDE 3-PHASE FULL WAVE BRIDGE |
| SHB601052G_09 | 制造商:SENSITRON 制造商全稱:Sensitron 功能描述:SILICON CARBIDE 3-PHASE FULL WAVE BRIDGE |
| SHB601112E | 制造商:SENSITRON 制造商全稱:Sensitron 功能描述:SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE |
| SHB601112E_09 | 制造商:SENSITRON 制造商全稱:Sensitron 功能描述:SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE |
發(fā)布緊急采購，3分鐘左右您將得到回復。