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參數(shù)資料
| 型號(hào)： | SHB601052G |
| 廠(chǎng)商： | SENSITRON SEMICONDUCTOR |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | SILICON CARBIDE 3-PHASE FULL WAVE BRIDGE |
| 中文描述： | 3 PHASE, 5 A, SILICON, BRIDGE RECTIFIER DIODE, MO-078AA |
| 封裝： | HERMETIC SEALED, TO-258, 5 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 63K |
| 代理商： | SHB601052G |
221 WEST INDUSTRY COURT
DEER PARK, NY 11729-4681
PHONE (631) 586-7600
FAX (631) 242-9798
World Wide Web - http://www.sensitron.com
E-mail Address - sales@sensitron.com
SENSITRON
Technical Data
Datasheet 4288 REV. –
SILICON CARBIDE 3-PHASE FULL WAVE BRIDGE
DESCRIPTION:
1200-VOLT, 5 AMP POWER SILICON CARBIDE 3-PHASE FULL WAVE BRIDGE IN A
HERMETIC 5-PIN TO-258 (MO-078) PACKAGE.
FEATURES:
NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
MAXIMUM RATINGS
ALL RATINGS ARE @ T
C
= 25
°
C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL
MAX.
UNITS
PEAK INVERSE VOLTAGE
PIV
1200
Volts
MAXIMUM DC OUTPUT CURRENT (With T
C
= 65
O
C) PER LEG
I
O
5
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT
(t = 8.3ms, Sine) per leg, T
C
= 25
O
C
I
FRM
30
Amps
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
(t = 10
μ
s, pulse) per leg, T
C
= 25
O
C
I
FSM
100
Amps
MAXIMUM JUNCTION CAPACITANCE (V
r
=5V) per leg
C
T
450
pF
MAXIMUM POWER DISSIPATION, T
C
= 25
O
C
P
d
60
W
MAXIMUM THERMAL RESISTANCE, Junction to Case
R
θ
JC
0.6
°
C/W
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE
Top, Tstg
-55 to
+175
°
C
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
TYP
MAX.
UNITS
MAXIMUM FORWARD VOLTAGE DROP (I
f
= 5 A PER LEG) V
f
T
J
=25
°
C
T
J
=150
°
C
MAXIMUM REVERSE CURRENT (1200V PIV PER LEG) I
r
T
J
= 25
°
C
T
J
= 150
°
C
TOTAL CAPACITANCE CHARGE (V
R
=1200V, I
F
=5A, di/dt=500A/
μ
s and
T
J
=25
°
C) Q
C
per leg
1.65
2.55
1.80
3.00
Volts
0.05
0.10
0.20
1.00
mA
28
N/A
nC
Application Note: Customers should be aware that at the current stage of technical development of SiC, the reverse avalanche
capabilities of the device are limited.
Customer designs will need to accommodate these limitations and avoid exposure of the device to this and other potentially
damaging conditions in their applications.
SHB601052G
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