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參數(shù)資料
| 型號： | SGW13N60UF |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Ultra-Fast IGBT |
| 中文描述： | 13 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 569K |
| 代理商： | SGW13N60UF |
SGW13N60UF Rev. A1
S
G
W13N60UF
2002 Fairchild Semiconductor Corporation
110
100
400
10
100
600
Eon
Eoff
Eon
Eoff
Common Emitter
V
CC = 300V, VGE =
± 15V
I
C = 6.5A
T
C =
25℃
T
C = 125
℃
Swi
tc
h
in
g
Lo
ss
[uJ]
Gate Resistance, R
G [ ]
110
100
300
50
100
600
Toff
Tf
Toff
Tf
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 6.5A
TC = 25℃
TC = 125℃
S
w
it
c
h
in
g
T
im
e
[n
s
]
Gate Resistance, RG [
]
110
100
400
10
100
300
Common Emitter
V
CC = 300V, VGE =
± 15V
I
C = 6.5A
T
C =
25℃
T
C = 125
℃
Ton
Tr
S
w
it
c
h
in
g
T
im
e
[
n
s
]
Gate Resistance, R
G
[
]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
0246
8
10
12
14
50
100
1000
Toff
Tf
Toff
Tf
Common Emitter
V
CC = 300V, VGE =
± 15V
R
G = 50
T
C =
25℃
T
C = 125
℃
S
w
itc
h
in
g
T
im
e
[ns]
Collector Current, I
C [A]
0246
8
10
12
14
10
100
200
Ton
Tr
Common Emitter
V
CC = 300V, VGE =
± 15V
R
G = 50
T
C =
25℃
T
C = 125
℃
Sw
it
ch
in
g
T
im
e
[
n
s
]
Collector Current, I
C [A]
110
30
0
100
200
300
400
500
600
Cres
Coes
Cies
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25℃
Cap
a
ci
ta
n
c
e
[
p
F]
Collector - Emitter Voltage, V
CE [V]
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SGW13N60UFD | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT |
| SGW13N60UFDTM | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGW13N60UFTM | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGW15N120 | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 1200V 15A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGW15N120FKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 1200V 30A 198W TO247-3 |
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