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參數(shù)資料
| 型號(hào)： | SGP02N120 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Fast S-IGBT in NPT-technology |
| 中文描述： | 快速的S -不擴(kuò)散核武器條約IGBT的技術(shù) |
| 文件頁(yè)數(shù)： | 8/13頁(yè) |
| 文件大?。?/td> | 389K |
| 代理商： | SGP02N120 |
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Preliminary
SGP02N120
SGB02N120, SGD02N120
Power Semiconductors
8
Mar-00
V
G
,
G
-
E
0nC
5nC
10nC
15n
0V
5V
10V
15V
20V
U
CE
=960V
C
,
C
0V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(
V
GE
= 0V,
f
= 1MHz)
10V
20V
30V
10pF
100pF
C
rss
C
oss
C
iss
Q
GE
,
GATE CHARGE
Figure 17. Typical gate charge
(
I
C
= 2A)
t
s
,
S
10V
11V
12V
13V
14V
15V
0
μ
s
5
μ
s
10
μ
s
15
μ
s
20
μ
s
25
μ
s
30
μ
s
I
C
,
S
10V
12V
14V
16V
18V
20V
0A
10A
20A
30A
40A
V
GE
,
GATE
-
EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(
V
CE
= 1200V, start at
T
j
= 25
°
C)
V
GE
,
GATE
-
EMITTER VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(100V
≤
V
CE
≤
1200V,
T
C
= 25
°
C,
T
j
≤
150
°
C)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SGP02N120_07 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation |
| SGP02N120XK | 制造商:Infineon Technologies AG 功能描述: |
| SGP02N120XKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 6.2A 3-Pin(3+Tab) TO-220 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 1200V 6.2A 62W TO220-3 |
| SGP02N60 | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 2A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGP02N60_07 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation |
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