參數(shù)資料
型號(hào): SGP02N120
廠商: INFINEON TECHNOLOGIES AG
英文描述: Fast S-IGBT in NPT-technology
中文描述: 快速的S -不擴(kuò)散核武器條約IGBT的技術(shù)
文件頁數(shù): 4/13頁
文件大?。?/td> 389K
代理商: SGP02N120
Preliminary
SGP02N120
SGB02N120, SGD02N120
Power Semiconductors
4
Mar-00
I
C
,
C
10Hz
100Hz
f
,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(
T
j
150
°
C,
D =
0.5,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
= 91
)
1kHz
10kHz
100kHz
0A
2A
4A
6A
8A
10A
12A
T
C
=110°C
T
C
=80°C
I
C
,
C
1V
10V
100V
1000V
0.01A
0.1A
1A
10A
DC
20ms
150
μ
s
50
μ
s
500
μ
s
t
p
=10
μ
s
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(
D =
0,
T
C
= 25
°
C,
T
j
150
°
C)
P
t
,
P
25°C
50°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(
T
j
150
°
C)
75°C
100°C
125°C
0W
10W
20W
30W
40W
50W
60W
I
C
,
C
25°C
50°C
T
C
,
CASE TEMPERATURE
75°C
100°C
125°C
0A
1A
2A
3A
4A
5A
6A
7A
Figure 4. Collector current as a function of
case temperature
(
V
GE
15V,
T
j
150
°
C)
I
c
I
c
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