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參數(shù)資料
| 型號： | SGM2N60UF |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Ultrafast IGBT |
| 中文描述： | 2.4 A, 600 V, N-CHANNEL IGBT |
| 封裝： | LEAD FREE, SOT-223, 4 PIN |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 537K |
| 代理商： | SGM2N60UF |
SGM2N60UF Rev. A
S
2003 Fairchild Semiconductor Corporation
1
10
100
1000
0.1
1
10
20
Safe Operating Area
V
GE
=20V, T
C
=100
o
C
C
C
Collector-Emitter Voltage, V
CE
[V]
0
2
4
6
8
10
0
3
6
9
12
15
300 V
200 V
V
CE
= 100 V
Common Emitter
R
L
= 250
Tc = 25
o
C
G
G
Gate Charge, Q
g
[ nC ]
Fig 14. Gate Charge Characteristics
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
Fig 13. Switching Loss vs. Collector Current
Fig 17. Transient Thermal Impedance of IGBT
0.5
1.0
1.5
2.0
2.5
10
100
Eoff
Eon
Eon
Eoff
Common Emitter
V
CC
= 300V, V
GE
= +15V
R
G
= 200
T
C
= 25
T
C
= 125
o
C
o
C
S
Collector Current, I
C
[A]
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
2
1 0
3
1 0
-1
1 0
0
1 0
1
1 0
2
R e c ta n g u la r P u ls e D u ra tio n [s e c ]
T
o
C
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
Zthjc + T
C
1
10
100
1000
1E-3
0.01
0.1
1
10
C
C
Collector-Emitter Voltage, V
CE
[V]
Single Nonrepetitive
Pulse T
= 25
Curves must be derated
linearly with increase
in temperature
o
C
50
μ
s
100
μ
s
1
DC Operation
I
C
MAX. (Continuous)
I
C
MAX. (Pulsed)
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| SGM2N60UFTF | 功能描述:IGBT 晶體管 Dis High Perf IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGM3001 | 制造商:SGMICRO 制造商全稱:SGMICRO 功能描述:Low ON-Resistance, Low Voltage, SPDT Analog Switch |
| SGM3001XC6/TR | 制造商:SGMICRO 制造商全稱:SGMICRO 功能描述:Low ON-Resistance, Low Voltage, SPDT Analog Switch |
| SGM3002 | 制造商:SGMICRO 制造商全稱:SGMICRO 功能描述:Low ON-Resistance, Low Voltage, SPDT Analog Switch |
| SGM3002XMS | 制造商:SGMICRO 制造商全稱:SGMICRO 功能描述:Low ON-Resistance, Low Voltage, SPDT Analog Switch |
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