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參數(shù)資料
| 型號： | SGM2N60UF |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Ultrafast IGBT |
| 中文描述： | 2.4 A, 600 V, N-CHANNEL IGBT |
| 封裝： | LEAD FREE, SOT-223, 4 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 537K |
| 代理商： | SGM2N60UF |
SGM2N60UF Rev. A
S
2003 Fairchild Semiconductor Corporation
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 125
o
C
2.4A
1.2A
I
C
= 0.6A
C
C
Gate - Emitter Voltage, V
GE
[V]
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 25
o
C
2.4A
1.2A
I
C
= 0.6A
C
C
Gate - Emitter Voltage, V
GE
[V]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.1
1
10
100
1000
Duty cycle : 50%
T
= 100
Power Dissipation = 4W
o
C
V
= 300V
Load Current : peak of square wave
Frequency [KHz]
L
0
30
60
90
120
150
0
1
2
3
4
2.4A
1.2A
I
C
= 0.6A
Common Emitter
V
GE
= 15V
C
C
Case Temperature, T
C
[
o
C]
0.5
1
10
0
1
2
3
4
5
6
Common Emitter
V
GE
= 15V
T
C
= 25
T
C
= 125
o
C
o
C
C
C
Collector - Emitter Voltage, V
CE
[V]
0
2
4
6
8
0
2
4
6
8
10
12
20V
12V
15V
V
GE
= 10V
Common Emitter
T
C
= 25
o
C
C
C
Collector - Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
Fig 5. Saturation Voltage vs. V
GE
Fig 6. Saturation Voltage vs. V
GE
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參數(shù)描述 |
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| SGM2N60UFTF | 功能描述:IGBT 晶體管 Dis High Perf IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGM3001 | 制造商:SGMICRO 制造商全稱:SGMICRO 功能描述:Low ON-Resistance, Low Voltage, SPDT Analog Switch |
| SGM3001XC6/TR | 制造商:SGMICRO 制造商全稱:SGMICRO 功能描述:Low ON-Resistance, Low Voltage, SPDT Analog Switch |
| SGM3002 | 制造商:SGMICRO 制造商全稱:SGMICRO 功能描述:Low ON-Resistance, Low Voltage, SPDT Analog Switch |
| SGM3002XMS | 制造商:SGMICRO 制造商全稱:SGMICRO 功能描述:Low ON-Resistance, Low Voltage, SPDT Analog Switch |
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