參數(shù)資料
型號(hào)： SGL50N60
廠商： Fairchild Semiconductor Corporation
英文描述： Short Circuit Rated IGBT
中文描述： 短路額定IGBT的
文件頁數(shù)： 2/7頁
文件大小： 563K
代理商： SGL50N60
SGL50N60RUF Rev. A1
S
2002 Fairchild Semiconductor Corporation
Electrical Characteristics of the IGBT
T
C
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
Collector-Emitter Breakdown Voltage
B
VCES
/
T
J
Voltage
I
CES
Collector Cut-Off Current
I
GES
G-E Leakage Current
V
GE
= 0V, I
C
= 250uA
600
--
--
V
Temperature Coefficient of Breakdown
V
GE
= 0V, I
C
= 1mA
--
0.6
--
V/
°
C
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
--
--
--
--
250
± 100
uA
nA
On Characteristics
V
GE(th)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Ic = 50mA, V
CE
= V
GE
I
C
= 50A
,
V
GE
= 15V
I
C
= 80A
,
V
GE
= 15V
5.0
--
--
6.0
2.2
2.5
8.5
2.8
--
V
V
V
V
CE(sat)
Dynamic Characteristics
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
V
CE
=30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
3311
399
139
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
V
CC
= 300 V, I
C
= 50A,
R
G
= 5.9
, V
GE
= 15V,
Inductive Load, T
C
= 25
°
C
--
--
--
--
--
--
--
--
--
--
--
--
--
--
26
89
66
118
1.68
1.03
2.71
28
91
68
261
1.7
2.31
4.01
--
--
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
100
200
--
--
3.8
--
--
110
400
--
--
5.62
V
CC
= 300 V, I
C
= 50A,
R
G
= 5.9
, V
GE
= 15V,
Inductive Load, T
C
= 125
°
C
T
sc
Short Circuit Withstand Time
V
CC
= 300 V, V
GE
= 15V,
@
T
C
= 100
°
C
10
--
--
us
Q
g
Q
ge
Q
gc
L
e
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
V
CE
= 300 V, I
C
= 50A,
V
GE
= 15V
--
--
--
--
145
25
70
18
210
35
100
--
nC
nC
nC
nH
Measured 5mm from PKG
相關(guān)PDF資料
PDF描述
SGL50N60RUF Ceramic Multilayer Capacitor; Capacitance:4700pF; Capacitance Tolerance:+50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:W2F; Leaded Process Compatible:Yes
SGL5N150UF General Description
SGL5N60RUFD CO-PAK IGBT(CO-PAK絕緣柵雙極晶體管(IGBT))
SGL60N90DG3 Wide Noise Immunity IGBT(抗噪聲絕緣柵雙極晶體管(IGBT))
SGL60N90D IGBT CO-PAK (High Speed Switching Low Saturation Voltage High Input Impedance)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SGL50N60RUF 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT
SGL50N60RUFD 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT
SGL50N60RUFDTU 功能描述:IGBT 晶體管 N-CH 600V 50A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGL50N60RUFTU 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGL5N150UF 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Description
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*