參數(shù)資料
型號: SGL40N150D
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: Low Conduction And Switching losses IGBT(小電導(dǎo)、轉(zhuǎn)換耗損絕緣柵雙極晶體管(IGBT))
中文描述: 40 A, 1500 V, N-CHANNEL IGBT, TO-264AA
封裝: TO-264, 3 PIN
文件頁數(shù): 4/6頁
文件大小: 419K
代理商: SGL40N150D
2000 Fairchild Semiconductor International
SGL40N150D Rev. A
S
Fig 7. Turn-Off Characteristics vs.
Collector Current
Fig 8. Turn-On Characteristics vs.
Collector Current
Fig 9. Switching Loss vs. Collector Current
Fig 10. Turn-Off Characteristics vs.
Gate Resistance
Fig 11. Turn-On Characteristics vs.
Gate Resistance
Fig 12. Switching Loss vs. Gate Resistance
20
30
40
50
60
70
80
100
1000
tf
Common Emitter
V
GE
=
±
15V, R
G
= 51
T
C
= 25
T
C
= 125
o
C
o
C
tf
td(off)
S
Collector Current, I
C
[A]
10
20
30
40
50
60
70
80
90
100
1000
Common Emitter
V
GE
=
±
15V, R
G
= 51
T
C
= 25
T
C
= 125
o
C
o
C
tr
td(on)
S
Collector Current, I
C
[A]
10
100
100
1000
tf
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 40A
T
C
= 25
T
C
= 125
tf
o
C
o
C
td(off)
S
Gate Resistance, R
G
[
]
10
100
10
100
1000
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 40A
T
C
= 25
T
C
= 125
o
C
o
C
tr
td(on)
S
Gate Resistance, R
G
[
]
10
100
1000
10000
Eon
Eoff
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 40A
T
C
= 25
T
C
= 125
o
C
o
C
Eon
Eoff
S
μ
J
Gate Resistance, R
G
[
]
10
20
30
40
50
60
70
80
90
100
1000
10000
Eoff
Eon
Common Emitter
V
GE
=
±
15V, R
G
= 51
T
C
= 25
T
C
= 125
o
C
o
C
Eoff
S
J
Collector Current, I
C
[A]
相關(guān)PDF資料
PDF描述
SGL40N150 Low Conduction And Switching losses IGBT(小電導(dǎo)、轉(zhuǎn)換耗損絕緣柵雙極晶體管(IGBT))
SGL50N60RUFD Short Circuit Rated IGBT
SGL50N60 Short Circuit Rated IGBT
SGL50N60RUF Ceramic Multilayer Capacitor; Capacitance:4700pF; Capacitance Tolerance:+50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:W2F; Leaded Process Compatible:Yes
SGL5N150UF General Description
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SGL40N150DTU 功能描述:IGBT 晶體管 Copak Discrete IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGL40N150TU 功能描述:IGBT 晶體管 Dis IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGL41-20 制造商:GI 功能描述: 制造商:GSI Technology 功能描述: 制造商:GS 功能描述:General Purpose 20V SMD (Surface Mount) Diode 制造商:GS 功能描述:General Purpose 20V SMD (Surface Mount) Diode - free partial T/R at 500. 制造商:GENERAL_SEMI 功能描述:
SGL41-20/1 功能描述:DIODE SCHOTTKY 1A 20V DO-213AB RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 單二極管/整流器 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 二極管類型:標(biāo)準(zhǔn) 電壓 - (Vr)(最大):50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時(shí)為正向 (Vf)(最大):1.4V @ 6A 速度:快速恢復(fù) = 200mA(Io) 反向恢復(fù)時(shí)間(trr):300ns 電流 - 在 Vr 時(shí)反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類型:底座,接線柱安裝 封裝/外殼:DO-203AA,DO-4,接線柱 供應(yīng)商設(shè)備封裝:DO-203AA 包裝:散裝 其它名稱:*1N3879
SGL41-20/46 功能描述:肖特基二極管與整流器 Vr/20V Io/1A T/R RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel