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參數(shù)資料
| 型號： | SGH5N120RUF |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Short Circuit Rated IGBT |
| 中文描述： | 8 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | TO-3P, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 513K |
| 代理商： | SGH5N120RUF |
SGH5N120RUFD Rev. B2
S
2002 Fairchild Semiconductor Corporation
Fig 14. Gate Charge Characteristics
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA
Fig 17. Transient Thermal Impedance of IGBT
Fig 13. Switching Loss vs. Collector Current
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
1E-3
0.01
0.1
1
10
0.1
0.5
0.2
0.05
0.02
0.01
single pulse
T
Rectangular Pulse Duration [sec]
1
10
100
1000
1
10
Safe Operating Area
V
GE
= 20V, T
C
= 100
℃
C
C
Collector - Emitter Voltage, V
CE
[V]
2
4
6
8
10
100
1000
Common Emitter
V
GE
=
±
15V, R
G
= 30
T
C
= 25
℃
T
C
= 125
℃
Eoff
Eon
Eoff
Eon
S
μ
J
Collector Current, I
C
[A]
0
10
20
30
0
2
4
6
8
10
12
14
16
Common Emitter
R
L
= 120
T
C
= 25
℃
600V
400V
V
CC
= 200V
G
G
Gate Charge, Q
g
[nC]
0.1
1
10
100
1000
0.01
0.1
1
10
100
Single Nonrepetitive
Pulse T
C
= 25
℃
Curves must be derated
linearly with increase
in temperature
50
μ
s
100
μ
s
1ms
DC Operation
I
C
MAX. (Pulsed)
I
C
MAX. (Continuous)
C
C
Collector - Emitter Voltage, V
CE
[V]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SGH5N120RUFD | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT |
| SGH5N120RUFDTU | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGH5N120RUFTU | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SG-H6500 | 制造商:Distributed By MCM 功能描述:Black Hawk RC Helicopter |
| SGH80N60 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT |
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