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參數(shù)資料
| 型號： | SGH5N120RUF |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Short Circuit Rated IGBT |
| 中文描述： | 8 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | TO-3P, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 513K |
| 代理商： | SGH5N120RUF |
SGH5N120RUFD Rev. B2
S
2002 Fairchild Semiconductor Corporation
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
10
100
10
Common Emitter
V
= 600V, V
GE
=
±
15V
I
C
=5A
T
C
= 25
℃
T
C
= 125
℃
tr
td(on)
S
Gate Resistance, R
G
[
]
10
100
10
100
1000
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
T
C
= 25
℃
T
C
= 125
℃
tf
td(off)
S
Gate Resistance, R
G
[
]
2
4
6
8
10
100
1000
Common Emitter
V
GE
=
±
15V, R
G
= 30
T
C
= 25
℃
T
C
= 125
℃
tf
td(off)
S
Collector Current, I
C
[A]
1
10
0
200
400
600
800
1000
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
℃
Cies
Coes
Cres
C
Collector - Emitter Voltage, V
CE
[V]
10
100
100
1000
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 5A
T
C
= 25
℃
T
C
= 125
℃
Eoff
Eon
Eoff
S
μ
J
Gate Resistance, R
G
[
]
2
4
6
8
10
10
100
Common Emitter
V
GE
=
±
15V, R
G
= 30
T
C
= 25
℃
T
C
= 125
℃
tr
td(on)
S
Collector Current, I
C
[A]
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| SGH5N120RUFD | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT |
| SGH5N120RUFDTU | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGH5N120RUFTU | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SG-H6500 | 制造商:Distributed By MCM 功能描述:Black Hawk RC Helicopter |
| SGH80N60 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT |
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