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參數(shù)資料
| 型號： | SGH5N120RUF |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Short Circuit Rated IGBT |
| 中文描述： | 8 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | TO-3P, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 513K |
| 代理商： | SGH5N120RUF |
SGH5N120RUFD Rev. B2
S
2002 Fairchild Semiconductor Corporation
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
Fig 5. Saturation Voltage vs. V
GE
Fig 6. Saturation Voltage vs. V
GE
0
4
8
12
16
20
0
4
8
12
16
20
10A
5A
I
C
= 3A
Common Emitter
T
C
= 25
℃
C
C
Gate - Emitter Voltage, V
GE
[V]
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 125
℃
10A
5A
I
C
= 3A
C
C
[
Gate - Emitter Voltage, V
GE
[V]
25
50
75
100
125
150
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
Common Emitter
V
GE
= 15V
I
C
= 5A
8A
C
C
Case Temperature, T
C
[
℃
]
0
2
4
6
8
10
0
5
10
15
20
25
Common Emitter
V
GE
= 15V
T
C
= 25
℃
T
C
= 125
℃
C
C
Collector - Emitter Voltage, V
CE
[V]
0
2
4
6
8
10
0
10
20
30
40
20V
17V
15V
12V
V
GE
= 10V
Common Emitter
T
C
= 25
℃
C
C
Collector - Emitter Voltage, V
CE
[V]
0.1
1
10
100
1000
0
4
8
12
V
CC
= 600V
Load Current : peak of square wave
Duty cycle : 50%
T
C
= 100
℃
Power Dissipation = 15W
L
Frequency [KHz]
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| SGH5N120RUFD | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT |
| SGH5N120RUFDTU | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGH5N120RUFTU | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SG-H6500 | 制造商:Distributed By MCM 功能描述:Black Hawk RC Helicopter |
| SGH80N60 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT |
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