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參數(shù)資料
| 型號： | SGF30N60RUFD |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | CO-PAK IGBT(CO-PAK絕緣柵雙極晶體管(IGBT)) |
| 中文描述： | 48 A, 600 V, N-CHANNEL IGBT |
| 封裝： | TO-3PF, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 352K |
| 代理商： | SGF30N60RUFD |
Fig.5 Maximum Effective Transient Thermal Impedance, Junction to Case
Fig.6 Typical Capacitance vs.
Collector to Emitter Voltage
Fig.7 Typical Gate Charge vs.
Gate to Emitter Voltage
1
10
0
500
1000
1500
2000
2500
3000
Cres
Coes
Cies
C
Vce [V]
0
20
40
60
Qg [nC]
80
100
120
140
0
4
8
12
16
20
Vcc = 300V
Ic = 30A
V
G
1E-5
1E-4
1E-3
0.01
0.1
1
10
0.01
0.1
1
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
T
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm x Zthjc + Tc
CO-PAK IGBT
SGF30N60RUFD
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| SGF31 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:For C to Ku-band Local Oscillator and Amplifier |
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