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參數(shù)資料
| 型號： | SGF30N60RUFD |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | CO-PAK IGBT(CO-PAK絕緣柵雙極晶體管(IGBT)) |
| 中文描述： | 48 A, 600 V, N-CHANNEL IGBT |
| 封裝： | TO-3PF, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 352K |
| 代理商： | SGF30N60RUFD |
FEATURES
* Short Circuit rated 10
μ
s @T
C
=100
°
C
* High Speed Switching
* Low Saturation Voltage
: V
CE
(sat) = 2.0 V @ I
C
=30A
* High Input Impedance
* CO-PAK, IGBT with FRD
: Trr = 50ns (Typ)
APPLICATIONS
* AC & DC Motor controls
* General Purpose Inverters
* Robotics , Servo Controls
* Power Supply
* Lamp Ballast
ABSOLUTE MAXIMUM RATINGS
Notes:
(1) Repetitive rating : Pulse width limited by max. junction temperature
TO-3PF
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
T
SC
T
J
T
STG
T
L
Characteristics
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current @ T
C
= 25
°
C
Collector Current @ T
C
= 100
°
C
Pulsed Collector Current
Diode Continuous Forward Current @ T
C
= 100
°
C
Diode Maximum Forward Current
Maximum Power Dissipation @T
C
= 25
°
C
Maximum Power Dissipation @T
C
= 100
°
C
Short Circuit Withstand Time
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. For Soldering
Purposes, 1/8
”
from case for 5 seconds
Rating
600
±
20
48
30
90
25
220
135
54
10
-55 ~ 150
-55 ~ 150
300
Units
V
V
A
A
A
A
A
W
W
μ
s
°
C
°
C
°
C
G
C
E
CO-PAK IGBT
SGF30N60RUFD
1999 Fairchild Semiconductor Corporation
Rev.B
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|---|---|
| SGF31 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:For C to Ku-band Local Oscillator and Amplifier |
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| SGF33 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:For C to Ku-Band Local Oscillator and Amplifier |
| SGF34 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N CHANNEL GAAS TRANSISTOR |
| SGF34-TL-E | 制造商:ON Semiconductor 功能描述: |
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