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參數(shù)資料
| 型號： | SGF30N60RUFD |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | CO-PAK IGBT(CO-PAK絕緣柵雙極晶體管(IGBT)) |
| 中文描述： | 48 A, 600 V, N-CHANNEL IGBT |
| 封裝： | TO-3PF, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 352K |
| 代理商： | SGF30N60RUFD |
Characteristics
C - E Breakdown Voltage
Temperature Coeff. of
Breakdown Voltage
G - E threshold voltage
Collector cutoff Current
G - E leakage Current
Collector to Emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Turn on rise time
Turn off delay time
Turn off fall time
Turn on Switching Loss
Turn off Switching Loss
Total Switching Loss
Short Circuit withstand Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Symbol
BV
CES
V
CES/
T
J
V
GE(th)
I
CES
I
GES
V
CE
(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
T
SC
Qg
Qge
Qgc
Min
600
-
5.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
-
-
-
Typ
-
0.6
6.0
-
-
2.0
2.4
1810
304
65
18
26
80
80
0.1
0.7
0.8
-
122
28
41
Max
-
-
8.0
250
100
2.7
-
-
-
-
-
-
110
160
-
-
1.5
-
183
42
61
Units
V
V/
°
C
V
μ
A
nA
V
V
pF
pF
pF
ns
ns
ns
ns
mJ
mJ
mJ
μ
s
nC
nC
nC
ELECTRICAL CHARACTERISTICS (IGBT PART)
(T
C
=25
°
C, Unless Otherwise Specified)
Test Conditions
V
GE
= 0V , I
C
= 250
μ
A
V
GE
= 0V , I
C
= 1mA
I
C
=30mA , V
CE
= V
GE
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
=30A, V
GE
= 15V
I
C
=48A, V
GE
= 15V
V
GE
= 0V , f = 1MHz
V
CE
= 30V
V
CC
= 300V , I
C
= 30A
V
GE
= 15V
R
G
= 7
Inductive Load
V
CC
= 300V, V
GE
= 15V
@T
C
= 100
°
C
V
CC
= 300V
V
GE
= 15V
I
C
= 30A
CO-PAK IGBT
SGF30N60RUFD
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| SGF31 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:For C to Ku-band Local Oscillator and Amplifier |
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