參數(shù)資料
型號(hào): SFH421
廠商: SIEMENS A G
元件分類: 紅外LED
英文描述: GaAlAs-IR-Lumineszenzdiode in SMT-Gehause GaAlAs Infrared Emitter in SMT Package
中文描述: 2.4 mm, 1 ELEMENT, INFRARED LED, 880 nm
文件頁(yè)數(shù): 5/5頁(yè)
文件大?。?/td> 53K
代理商: SFH421
SFH 421
SFH 426
Semiconductor Group
5
1997-11-01
Lthinweise
Soldering conditions
Zustzliche Informationen über allgemeine Ltbedingungen finden Sie im Datenbuch S. 103ff.
For additional information on generel soldering conditions please refer to our Data Book on
page 169ff.
Bauform
Types
Tauch-, Schwall- und Schleppltung
Dip, wave and drag soldering
Reflowltung
Reflow soldering
Ltbad-
temperatur
Temperature
of the
soldering
bath
260
°
C
Maximal
zulssige
Ltzeit
Max. perm.
soldering
time
Abstand
Ltstelle –
Gehuse
Distance
between
solder joint
and case
Ltzonen-
temperatur
Temperature
of soldering
zone
Maximale
Durchlaufzeit
Max. transit
time
TOPLED
SIDELED
8 s
245
°
C
225
°
C
10 s
10 s
Permissible pulse handling capability
I
F
=
f
(
t
p
)
duty cycle
D
= Parameter,
T
A
= 25
°
C
10
Ι
F
OHR00886
1
2
10
3
10
4
10
mA
-5
10
s
=
D
F
Ι
T
DC
0.005
0.01
0.02
0.05
=
D
p
t
T
t
p
p
t
0.5
0.2
0.1
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
相關(guān)PDF資料
PDF描述
SFH426 GaAlAs-IR-Lumineszenzdiode in SMT-Gehause GaAlAs Infrared Emitter in SMT Package
SFH431 INFRARED EMITTER
SFH435 GaAs INFRARED EMITTER DOUBLE EMITTING DIODE
SFH4515 GaAs-IR-Lumineszenzdioden 950 nm GaAs Infrared Emitters 950 nm
SFH4580 GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters 880 nm
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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