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參數(shù)資料
| 型號(hào)： | SDE2526 |
| 廠商： | SIEMENS AG |
| 英文描述： | Nonvolatile Memory 2-Kbit E2PROM with I2C Bus Interface with Extended Temperature Range |
| 中文描述： | 非易失性內(nèi)存2與I2C總線接口與千位E2PROM的擴(kuò)展溫度范圍 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 232K |
| 代理商： | SDE2526 |
SDE 2526
Semiconductor Group
84
Memory Reprogramming
The reprogramming cycle of a memory word comprises an erase and a subsequent write process.
During erase, all eight bits of the selected word are set into the "1" state. During write, "0" states are
generated according to the information in the internal data register, i.e. according to the third input
control word. After the 27th and last clock of the control word input, the active programming process
is started by the stop condition. The active reprogramming process is executed under on-chip
control.
The time required for reprogramming depends on component deviation and data patterns.
Therefore, with rated supply voltage, the erase/write process extends over max. 20 ms, or more
typically, 10 ms. In the case of data word input without write request (write request is defined as data
bit in data register set to "0"), the write process is suppressed and the programming time is
shortened. During a subsequent programming of an already erased memory address, the erase
process is suppressed again, so that the reprogramming time is also shortened.
Important: Switch-On Mode and Chip Reset
After the supply voltage
V
CC
has been connected, the data output will be in high-impedance mode.
As a rule,
the first operating mode
to be entered, should be the
read process of a word address
.
As a result of the built-in "power-on reset" circuit, programming requests will not be accepted
immediately after the supply voltage has been switched on.
Total Erase
Enter the control word CS/E, load the address register with address 0 and the data register with FF
(hex) to erase the entire contents of the memory. Switch input CS2 to "open" immediately prior to
generating the stop condition. The subsequent stop condition triggers a total erase. Upon
termination of "total erase", CS2 must be reconnected to either 0 V or
≥
4.5 V.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SDE25X26A2 | OSC 5V SMT 7X5 CMOS PROGRM |
| sde 2526 | Nonvolatile Memory 2-Kbit EEPROM with IIC Bus Interface with Extended Temperature Range(2-K位EEPROM(帶IIC總線接口,擴(kuò)展溫度范圍)) |
| SDE25X26-5A2G | OSC 5V SMT 7X5 CMOS PROGRM |
| SDE2526-5 | Nonvolatile Memory 2-Kbit E2PROM with I2C Bus Interface with Extended Temperature Range |
| SDE2526-5A2G | Nonvolatile Memory 2-Kbit E2PROM with I2C Bus Interface with Extended Temperature Range |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SDE2526-5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Nonvolatile Memory 2-Kbit E2PROM with I2C Bus Interface with Extended Temperature Range |
| SDE2526-5A2G | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Nonvolatile Memory 2-Kbit E2PROM with I2C Bus Interface with Extended Temperature Range |
| SDE25X26-5A2G | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Nonvolatile Memory 2-Kbit E2PROM with I2C Bus Interface with Extended Temperature Range |
| SDE25X26A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Nonvolatile Memory 2-Kbit E2PROM with I2C Bus Interface with Extended Temperature Range |
| SDE6603-100M | 功能描述:固定電感器 10@ 100 KHz20% Tol. SRF (MHz) Typ.35 RoHS:否 制造商:AVX 電感:10 uH 容差:20 % 最大直流電流:1 A 最大直流電阻:0.075 Ohms 工作溫度范圍:- 40 C to + 85 C 自諧振頻率:38 MHz Q 最小值:40 尺寸:4.45 mm W x 6.6 mm L x 2.92 mm H 屏蔽:Shielded 端接類型:SMD/SMT 封裝 / 箱體:6.6 mm x 4.45 mm |
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