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參數(shù)資料
| 型號： | SDB55N02 |
| 廠商： | SamHop Microelectronics Corp. |
| 英文描述： | N-Channel E nhancement Mode Field E ffect Transistor |
| 中文描述： | N溝道位置nhancement模式域E ffect晶體管 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 479K |
| 代理商： | SDB55N02 |
Parameter
Symbol
Condition
Min
Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is =26A
0.9
1.3
V
a
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 4. On-Resistance Variation
Temperature
with
Figure 3. Capacitance
V
DS
, Drain-to Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
I
D
,
C
I
D
,
Notes
b.Guaranteed by design, not subject to production testing.
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
Ciss
Coss
Crss
3000
2500
2000
1500
1000
500
0
0
10
5
15
20
25
30
80
70
60
50
40
30
20
10
0
0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
=10,9,8,7,6,5,4V
60
45
30
15
0
0
1
2
3
4
5
75
4
D
R
,
3
SDP/B55N02
T
J
=125 C
6
V
GS
=3V
-55 C
25 C
-50
-25
0
25
50
75
100 125 150
1.60
1.40
1.20
1.00
0.80
0.60
0.40
I
D
=26A
V
GS
=10V
Tj, Junction Temperature ( C)
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