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參數(shù)資料
| 型號(hào)： | SDB55N02 |
| 廠商： | SamHop Microelectronics Corp. |
| 英文描述： | N-Channel E nhancement Mode Field E ffect Transistor |
| 中文描述： | N溝道位置nhancement模式域E ffect晶體管 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 479K |
| 代理商： | SDB55N02 |
ELECTRICAL CHARACTERISTICS (T
C
=
Parameter
Symbol
Condition
Min
Typ
Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
=
20
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
GS
0V
=
10
uA
Gate-Body Leakage
I
GSS
V
GS
8V, V
DS
=
100
nA
ON CHARACTERISTICS
a
Gate Threshold Voltage
V
GS(th)
V
DS
V
GS
, I
D
= 250uA
=
1
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=
4.5V, I
D
=
21A
19
On-State Drain Current
I
D(ON)
g
V
DS
= 10V, V
GS
= 10V
40
53
A
S
Forward Transconductance
FS
V
DS
=
10V, I
D
=
26A
DYNAMIC CHARACTERISTICS
b
Input Capacitance
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=15V, V
GS
= 0V
f =1.0MH
Z
1100
P
F
600
P
F
P
F
180
SWITCHING CHARACTERISTICS
b
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 10V,
I
D
= 1A,
V
GS
= 10V
R
GEN
= 6
50
ns
ns
ns
ns
200
89
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=10V, I
D
= 30A,
V
GS
=4.5V
nC
nC
nC
C
Fall Time
4
18.2
5.3
2.2
2
14
SDP/B55N02
0.9
1.5
62.5
m ohm
ohm
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SDB55N03L | 制造商:SAMHOP 制造商全稱:SAMHOP 功能描述:N-Channel Logic Level E nhancement Mode Field E ffect Transistor |
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| SDB560PH | 制造商:KODENSHI 制造商全稱:KODENSHI KOREA CORP. 功能描述:60V, 5A POWER SCHOTTKY RECTIFIER |
| SDB560PH-1 | 制造商:KODENSHI 制造商全稱:KODENSHI KOREA CORP. 功能描述:60V, 5A POWER SCHOTTKY RECTIFIER |
| SDB580PH | 制造商:KODENSHI 制造商全稱:KODENSHI KOREA CORP. 功能描述:80V, 5A POWER SCHOTTKY RECTIFIER |
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