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參數(shù)資料
| 型號(hào)： | SDB60N03L |
| 廠商： | SamHop Microelectronics Corp. |
| 英文描述： | N-Channel Logic Level E nhancement Mode Field E ffect Transistor |
| 中文描述： | N溝道邏輯E級(jí)nhancement模式域E ffect晶體管 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 519K |
| 代理商： | SDB60N03L |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted)
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
JC
R
JA
2.5
62.5
/W
C
/W
C
30
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
20
V
-Pulsed
I
D
56
A
I
DM
168
A
Drain-Source Diode Forward Current
I
S
60
A
Maximum Power Dissipation
P
D
W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to 175
C
@ Tc=25 C
75
Drain Current-Continuous @ TJ=125 C
a
S
G
D
SDB SERIES
TO-263(DD-PAK)
G
S
D
SDP SERIES
TO-220
S
D
G
4
1
PRODUCT SUMMARY
V
DSS
I
D
R
DS(on) ( m
)
30V
56A
11 @ V
GS
= 10V
19 @ V
GS
= 4.5V
SDP/B60N03L
SamHop Microelectronics Corp.
FEATURES
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
Max
May,2004 ver1.1
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