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參數(shù)資料
| 型號(hào)： | SBAS16LT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 0.2 A, SILICON, SIGNAL DIODE, TO-236AB |
| 封裝： | CASE 318-08, TO-236, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 88K |
| 代理商： | SBAS16LT3 |
Semiconductor Components Industries, LLC, 2008
October, 2008 Rev. 7
1
Publication Order Number:
BAS16LT1/D
BAS16LT1
Preferred Device
Switching Diode
Features
PbFree Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
75
Vdc
Peak Forward Current
IF
200
mAdc
Peak Forward Surge Current
IFM(surge)
500
mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board
(Note 1)
TA = 25°C
Derate above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
PD
300
2.4
mW
mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg 55 to +150
°C
1. FR5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
BAS16LT1
SOT23
3000/Tape & Reel
SOT23
CASE 318
STYLE 8
MARKING
DIAGRAM
1
2
3
BAS16LT1G
SOT23
(PbFree)
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3
CATHODE
1
ANODE
BAS16LT3G
SOT23
(PbFree)
10000/Tape & Reel
BAS16LT3
SOT23
10000/Tape & Reel
1
A6 M G
G
A6
= Specific Device Code
M
= Date Code*
G
= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary de-
pending upon manufacturing location.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| SBAS16LT3G | 功能描述:二極管 - 通用，功率，開關(guān) SS SWCH DIO SPCL TR RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| SBAS16WT1G | 功能描述:二極管 - 通用，功率，開關(guān) SS SWCH DIO 75V TR RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| SBAS16XV2T1G | 功能描述:二極管 - 通用，功率，開關(guān) SS SWITCHING DIODE RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| SBAS20HT1G | 功能描述:二極管 - 通用，功率，開關(guān) SS SWCH DIO 200V RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| SBAS20L | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High Voltage Switching Diode |
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