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參數(shù)資料
| 型號： | SBE813 |
| 元件分類： | 整流器 |
| 英文描述： | 3 A, 30 V, SILICON, RECTIFIER DIODE |
| 封裝： | ULTRA SMALL, VEC8, 8 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 36K |
| 代理商： | SBE813 |
SBE813
No.8967-1/3
Applications
High frequency rectification (switching regulators, converters, choppers).
Features
Small switching noise.
Low leakage current and high reliability due to highly reliable planar structure.
Ultrasmall package permitting applied sets to be small and slim.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Repetitive Peak Reverse Voltage
VRRM
30
V
Nonrepetitive Peak Reverse Surge Voltage
VRSM
35
V
Average Output Current
IO
3.0
A
Surge Forward Current
IFSM
50Hz sine wave, 1 cycle
20
A
Junction Temperature
Tj
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Reverse Voltage
VR
IR=0.5mA
30
V
Forward Voltage
VF1IF=2.0A
0.435
0.485
V
VF2IF=3.0A
0.47
0.52
V
Reverse Current
IR
VR=15V
42
A
Interterminal Capacitance
C
VR=10V, f=1MHz
90
pF
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit.
20
ns
Thermal Resistance
Rth(j-a)
Mounted on a ceramic board (1200mm2!0.8mm)
50
°C / W
Marking : SE
Ordering number : EN8967
72606 / 32406SB MS IM TB-00002132
SBE813
Low IR Schottky Barrier Diode
30V, 3.0A Rectifier
SANYO Semiconductors
DATA SHEET
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SBE813_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:30V, 3.0A Rectifier |
| SBE813-TL-E | 功能描述:肖特基二極管與整流器 SBD DUAL PARALLEL 3A 30V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| SBE817 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Low IR Schottky Barrier Diode 15V, 2.0A Rectifier |
| SBE818 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:30V, 2.0A Rectifi er |
| SBE818-TL-E | 功能描述:肖特基二極管與整流器 SBD DUAL PARALLEL 2A 30V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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