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參數(shù)資料
| 型號(hào)： | SBE812 |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 1 A, 60 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | ULTRA SMALL, VEC8, 8 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 34K |
| 代理商： | SBE812 |
SBE812
No.8966-1/4
Applications
High frequency rectification (switching regulators, converters, choppers).
Features
Small switching noise.
Low leakage current and high reliability due to highly reliable planar structure.
Ultrasmall package allows applied sets to be made small and thin.
Specifications
Absolute Maximum Ratings at Ta=25
°C (Value per element)
Parameter
Symbol
Conditions
Ratings
Unit
Repetitive Peak Reverse Voltage
VRRM
60
V
Nonrepetitive Peak Reverse Surge Voltage
VRSM
65
V
Average Output Current
IO
1.0
A
Surge Forward Current
IFSM
50Hz sine wave, 1 cycle
10
A
Junction Temperature
Tj
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
Electrical Characteristics at Ta=25
°C (Value per element)
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Reverse Voltage
VR
IR=0.2mA
60
V
Forward Voltage
VF
IF=1A
0.55
0.60
V
Reverse Current
IR
VR=30V
30
A
Interterminal Capacitance
C
VR=10V, f=1MHz
35
pF
Reverse Recovery Time
trr
IF=100mA, See specified Test Circuit.
10
ns
Rth(j-a)1
Mounted in Cu-foiled area of 1.92mm2!0.03mm
80
°C / W
Thermal Resistance
on glass epoxy board
Rth(j-a)2
Mounted on a ceramic board (1000mm2!0.8mm)
75
°C / W
Marking : SA
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN8966
D2605SB MS IM TB-00002015
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SBE812
Schottky Barrier Diode
60V, 1.0A Rectifier
相關(guān)PDF資料 |
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| SBE812 | 1 A, 60 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
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| SBE817 | 2 A, 15 V, SILICON, RECTIFIER DIODE |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SBE812-TL-E | 功能描述:肖特基二極管與整流器 SBD DUAL PARALLEL 1A 60V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| SBE813 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Low IR Schottky Barrier Diode 30V, 3.0A Rectifier |
| SBE813_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:30V, 3.0A Rectifier |
| SBE813-TL-E | 功能描述:肖特基二極管與整流器 SBD DUAL PARALLEL 3A 30V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| SBE817 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Low IR Schottky Barrier Diode 15V, 2.0A Rectifier |
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