參數(shù)資料
型號: SAX-XC878-16FFA3V3
廠商: INFINEON TECHNOLOGIES AG
元件分類: 微控制器/微處理器
英文描述: RISC MICROCONTROLLER, PQFP64
封裝: PLASTIC, TQFP-64
文件頁數(shù): 101/139頁
文件大小: 4777K
代理商: SAX-XC878-16FFA3V3
XC878CLM
Functional Description
Advance Information
Data Sheet
57
V0.1, 2008-04
Table 20 shows the Flash data retention and endurance targets.
3.3.1
Flash Bank Pagination
The XC878 product family offers Flash devices with either 64 Kbytes or 52 Kbytes of
embedded Flash memory. Each Flash device consists of a Program Flash (P-Flash) and
a single Data Flash (D-Flash) bank. P-Flash has 120 pages of 8 wordlines per page with
64 bytes per wordline. D-Flash has 64 pages of 2 wordlines per page with 32 bytes per
wordline. Both types can be used for code and data storage.. The label “Data” neither
implies that the D-Flash is mapped to the data memory region, nor that it can only be
used for data storage. It is used to distinguish the different page width and wordline of
each Flash bank.
The internal structure of each Flash bank represents a page architecture for flexible
erase capability. The minimum erase width is always a complete page. The D-Flash
bank is divided into smaller size for extended erasing and reprogramming capability;
even numbers for each page size are provided to allow greater flexibility and the ability
to adapt to a wide range of application requirements.
Table 20
Flash Data Retention and Endurance (Operating Conditions apply)
Retention
Endurance1)
1)One cycle refers to a page erase or a mass erase. The Flash endurance data specified in Table 20 is valid only
if the following condition is fulfilled:
- the maximum number of erase cycles per Flash page must not exceed tbd cycles.
Size
Remarks
Program Flash
15 years
tbd cycles
up to 60 Kbytes
Data Flash
15 years
tbd cycles
4 Kbytes
10 years
tbd cycles
4 Kbytes
5 years
tbd cycles
4 Kbyte
1 years
tbd cycles
4 Kbyte
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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