參數(shù)資料
型號: SAL-XC886C-8FFA5V
廠商: INFINEON TECHNOLOGIES AG
元件分類: 微控制器/微處理器
英文描述: 8-BIT, FLASH, 80 MHz, MICROCONTROLLER, PQFP48
封裝: GREEN, PLASTIC, TQFP-48
文件頁數(shù): 90/134頁
文件大?。?/td> 864K
代理商: SAL-XC886C-8FFA5V
SAL-XC886CLM
Functional Description
Data Sheet
52
V1.0, 2010-05
3.3.3
Flash Programming Width
For the P-Flash banks, a programmed wordline (WL) must be erased before it can be
reprogrammed as the Flash cells can only withstand one gate disturb. This means that
the entire sector containing the WL must be erased since it is impossible to erase a
single WL.
For the D-Flash bank, the same WL can be programmed twice before erasing is required
as the Flash cells are able to withstand two gate disturbs. This means if the number of
data bytes that needs to be written is smaller than the 32-byte minimum programming
width, the user can opt to program this number of data bytes (x; where x can be any
integer from 1 to 31) first and program the remaining bytes (32 - x) later. Hence, it is
possible to program the same WL, for example, with 16 bytes of data two times (see
Figure 11
D-Flash Programming
Note: When programming a D-Flash WL the second time, the previously programmed
Flash memory cells (whether 0s or 1s) should be reprogrammed with 0s to retain
its original contents and to prevent “over-programming”.
0000 ….. 0000
H
0000 ….. 0000
H
32 bytes (1 WL)
1111 ….. 1111
H
0000 ….. 0000
H
16 bytes
0000 ….. 0000
H
1111 ….. 1111
H
Flash memory cells
32-byte write buffers
1111 ….. 0000
H
1111 ….. 1111
H
0000 ….. 0000
H
1111 ….. 0000
H
Program 1
Program 2
Note: A Flash memory cell can be programmed
from 0 to 1, but not from 1 to 0.
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