
SAB 88C166(W)
Semiconductor Group
11
The selection of Flash Operation and Read Mode
is done via the three bits FWE, FEE and
FWMSET. The table below shows the combinations for these bits to select a specific function:
FWE enables/disables write operations, FEE selects erasing or programming, FWMSET controls
the writing mode. Bits FWE and FEE select an operation, but do not execute it directly.
Note:
Watch the FWMSET bit, when writing to register FCR (word access only), in order not to exit
Flash writing mode unintentionally by clearing bit FWMSET.
FBUSY:
This
read-only flag
is set to ‘1’ while a Flash programming or erasing operation is in
progress. FBUSY is set via hardware, when the respective command is issued.
RPROT:
This
write-only
Flash
Read Protection
bit determines whether Flash protection is active
or inactive. RPROT is the only FCR bit which can be modified even in the Flash standard mode but
only by an instruction executed from the on-chip Flash memory itself. Per reset, RPROT is set to ‘1’.
Note:
RPROT is only significant, if the general Flash memory protection is enabled.
FCVPP and VPPREV:
These
read-only
bits allow to monitor the V
PP
voltage. The Flash
Vpp
Revelation
bit VPPREV reflects the state of the V
PP
voltage in the Flash writing mode (VPPREV =
‘0’ indicates that V
PP
is below the threshold value necessary for reliable programming or erasure,
otherwise VPPREV = ‘1’). The Flash
Control V
PP
bit FCVPP indicates, if V
PP
fell below the valid
threshold value during a Flash programming or erase operation (FCVPP = ‘1’). FCVPP = ‘0’ after
such an operation indicates that no critical discontinuity on
V
PP
has occurred.
CKCTL:
This
Flash Timer Clock Control
bitfield controls the width of the programming or erase
pulses (TPRG) applied to Flash memory cells during the corresponding operation. The width of a
single programming or erase pulse and the cumulated programming or erase time must not exceed
certain values to avoid putting the Flash memory under critical stress (see table below).
FWMSET
FEE
FWE
Flash Operation Mode
Flash Read Mode
1
1
1
Erasing mode
Erase-Verify-Read via [Rn]
1
0
1
Programming mode
Program-Verify-Read via [Rn]
1
X
0
Non-Verify mode
Normal Read via [Rn]
0
X
X
Standard mode
Normal Read via [Rn] or mem
Time Specification
Maximum Programming Pulse Width
Maximum Cumulated Programming Time
Limit Value
128
2.5
μ
s
ms
Maximum Erase Pulse Width
Maximum Cumulated Erase Time
10
30
ms
s