參數(shù)資料
型號: S71GL064A08
廠商: Spansion Inc.
英文描述: STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM
中文描述: 堆疊式多芯片產(chǎn)品,閃存和RAM
文件頁數(shù): 112/134頁
文件大?。?/td> 2383K
代理商: S71GL064A08
February 8, 2005 S71GL064A_00_A2
S71GL064A based MCPs
77
Advance
Informatio n
VOH
Output High Voltage
IOH = -1.0 mA VCC-0.4
V
VCC-0.4
VV
IOH = -0.2 mA
0.8 VCCQ
IOH = -0.5 mA
VOL
Output Low Voltage
IOL = 2.0 mA
0.4
V
0.4
VV
IOL = 0.2 mA
0.2
IOL = 0.5 mA
IACTIVE Operating Current
VCC = 3.3 V
25
mA
23
mA
25
mA
ISTANDBY Standby Current
VCC = 3.0 V
60
A
60
A
70
A
VCC = 3.3 V
IDEEP
SLEEP
Deep Power Down
Current
xA
x
A
x
A
IPAR 1/4
1/4 Array PAR
Current
xA
x
A
x
A
IPAR 1/2
1/2 Array PAR
Current
xA
x
A
x
A
Table 15. 16Mb pSRAM Asynchronous
Asynchronous
Performance Grade
-55
-70
Density
16Mb pSRAM
Symbol
Parameter
Conditions
Minimum
Maximum
Units
Minimum Maximum
Units
VCC
Power Supply
2.7
3.6
V
2.7
3.6
V
VIH
Input High Level
2.2
VCC + 0.3
V
2.2
VCC + 0.3
V
VIL
Input Low Level
-0.3
0.6
V
-0.3
0.6
V
IIL
Input Leakage Current
Vin = 0 to VCC
0.5
A
0.5
A
ILO
Output Leakage Current
OE = VIH or Chip Disabled
0.5
A
0.5
A
VOH
Output High Voltage
IOH = -1.0 mA
VCC-0.4
V
VCC-0.4
V
IOH = -0.2 mA
IOH = -0.5 mA
VOL
Output Low Voltage
IOL = 2.0 mA
0.4
V
0.4
V
IOL = 0.2 mA
IOL = 0.5 mA
IACTIVE
Operating Current
VCC = 3.3 V
25
mA
25
mA
ISTANDBY
Standby Current
VCC = 3.0 V
100
A
100
A
VCC = 3.3 V
IDEEP SLEEP Deep Power Down Current
x
A
x
A
IPAR 1/4
1/4 Array PAR Current
x
A
x
A
Table 14. 8Mb pSRAM Asynchronous (Continued)
Asynchronous
Version
B
C
Performance Grade
-55
-70
Density
8Mb pSRAM
Symbol
Parameter
Conditions
Min
Max
Units
Min
Max
Units
Min
Max
Units
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