參數(shù)資料
型號： S29WS128N0LBFI013
廠商： Spansion Inc.
英文描述： 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
中文描述： 256/128/64兆位的CMOS 1.8伏只有同時讀/寫突發(fā)模式閃存
文件頁數(shù)： 36/99頁
文件大小： 1091K
代理商： S29WS128N0LBFI013
January 25, 2005 S29WS-N_00_G0
39
Ad vance
Information
After the programming operation has been suspended, the system can read array data from any
non-suspended sector. The Program Suspend command may also be issued during a program-
ming operation while an erase is suspended. In this case, data may be read from any addresses
not in Erase Suspend or Program Suspend. If a read is needed from the Secured Silicon Sector
area, then user must use the proper command sequences to enter and exit this region.
The system may also write the Autoselect command sequence when the device is in Program Sus-
pend mode. The device allows reading Autoselect codes in the suspended sectors, since the codes
are not stored in the memory array. When the device exits the Autoselect mode, the device re-
verts to Program Suspend mode, and is ready for another valid operation. See “Autoselect
Command Sequence” for more information.
After the Program Resume command is written, the device reverts to programming. The system
can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in
the standard program operation. See “Write Operation Status” for more information.
The system must write the Program Resume command (address bits are “don't care”) to exit the
Program Suspend mode and continue the programming operation. Further writes of the Program
Resume command are ignored. Another Program Suspend command can be written after the de-
vice has resumed programming.
The following is a C source code example of using the program suspend function. Refer to the
Spansion Low Level Driver User’s Guide (available on www.amd.com and www.fujitsu.com)
for general information on Spansion Flash memory software development guidelines.
/* Example: Program suspend command */
*( (UINT16 *)base_addr + 0x000 ) = 0x00B0;
/* write suspend command
*/
The following is a C source code example of using the program resume function. Refer to the
Spansion Low Level Driver User’s Guide (available on www.amd.com and www.fujitsu.com)
for general information on Spansion Flash memory software development guidelines.
/* Example: Program resume command */
*( (UINT16 *)base_addr + 0x000 ) = 0x0030;
/* write resume command
*/
7.5.7 Accelerated Program/Chip Erase
Accelerated single word programming, write buffer programming, sector erase, and chip erase
operations are enabled through the ACC function. This method is faster than the standard chip
program and erase command sequences.
The accelerated chip program and erase functions must not be used more than 10 times
per sector. In addition, accelerated chip program and erase should be performed at room tem-
perature (25
°C ±10°C).
Software Functions and Sample Code
Table 7.18. Program Suspend
(LLD Function = lld_ProgramSuspendCmd)
Cycle
Operation
Byte Address
Word Address
Data
1
Write
Bank Address
00B0h
Table 7.19. Program Resume
(LLD Function = lld_ProgramResumeCmd)
Cycle
Operation
Byte Address
Word Address
Data
1
Write
Bank Address
0030h
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29WS128N0LBFI110 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFI111 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFI112 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFI113 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFW010 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
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