參數(shù)資料
型號(hào): S29WS128N0LBFI013
廠商: Spansion Inc.
英文描述: 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
中文描述: 256/128/64兆位的CMOS 1.8伏只有同時(shí)讀/寫突發(fā)模式閃存
文件頁(yè)數(shù): 29/99頁(yè)
文件大小: 1091K
代理商: S29WS128N0LBFI013
January 25, 2005 S29WS-N_00_G0
33
Ad vance
Information
Figure 7.4. Write Buffer Programming Operation
7.5.3 Sector Erase
The sector erase function erases one or more sectors in the memory array. (See Table 12.1,
the system to preprogram prior to erase. The Embedded Erase algorithm automatically programs
and verifies the entire memory for an all zero data pattern prior to electrical erase. After a suc-
cessful sector erase, all locations within the erased sector contain FFFFh. The system is not
required to provide any controls or timings during these operations.
Write Unlock Cycles:
Address 555h, Data AAh
Address 2AAh, Data 55h
Issue
Write Buffer Load Command:
Address 555h, Data 25h
Load Word Count to Program
Program Data to Address:
SA = wc
Unlock Cycle 1
Unlock Cycle 2
wc = number of words – 1
Yes
No
wc = 0?
Write Buffer
Abort Desired?
Write Buffer
Abort?
Polling Status
= Done?
Error?
FAIL. Issue reset command
to return to read array mode.
Write to a Different
Sector Address to Cause
Write Buffer Abort
PASS. Device is in
read mode.
Confirm command:
SA 29h
Wait 4
s
Perform Polling Algorithm
(see Write Operation Status
flowchart)
Write Next Word,
Decrement wc:
PA
data , wc = wc – 1
RESET. Issue Write Buffer
Abort Reset Command
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