參數資料
型號: S29GL256M10TAIR23
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述: 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
封裝: MO-142EC, TSOP-56
文件頁數: 156/160頁
文件大?。?/td> 2142K
代理商: S29GL256M10TAIR23
156
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00A5 April 30, 2004
P r e l i m i n a r y
Physical Dimensions
FPT-56P-M01
18.40±0.10(.724±.004)
*
2
20.00±0.20(.787±.008)
14.00±0.10
(.551±.004)
M
0.10(.004)
0.10±0.05
(.004±.002)
(Stand off)
1
28
56
29
0.08(.003)
LEAD No.
Details of "A" part
0.60±0.15
(.024±.006)
0~8
.007±.001
0.17±0.03
0.22±0.05
(.009±.002)
(Mounting height)
INDEX
"A"
.043
+.004
–0.05
+0.10
1.10
0.50(.020)
0.25(.010)
*
1
相關PDF資料
PDF描述
S29GL256M10TFIR10 MOSFET, Switching; VDSS (V): 60; ID (A): 6; Pch : 2?3?; RDS (ON) typ. (ohm) @10V: 0.028; RDS (ON) typ. (ohm) @4V[4.5V]: [0.04]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1000; toff (µs) typ: 0.06; Package: SOP-8
S29GL256M10TFIR12 MOSFET, Switching; VDSS (V): 60; ID (A): 6; Pch : 2/3; RDS (ON) typ. (ohm) @10V: 0.028; RDS (ON) typ. (ohm) @4V[4.5V]: [0.04]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1000; toff (µs) typ: 0.06; Package: SOP-8
S29GL256M10TFIR13 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TFIR20 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TFIR22 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
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參數描述
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