參數(shù)資料
型號(hào): S29GL256M10TAIR23
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述: 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
封裝: MO-142EC, TSOP-56
文件頁數(shù): 127/160頁
文件大小: 2142K
代理商: S29GL256M10TAIR23
April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBit
TM
Flash Family
127
P r e l i m i n a r y
AC Characteristics
Hardware Reset (RESET#)
Notes:
1. Not 100% tested.
Figure 15. Reset Timings
Parameter
Description
All Speed Options
Unit
JEDEC
Std.
t
Ready
RESET# Pin Low (During Embedded Algorithms)
to Read Mode (See Note)
Max
20
μ
s
t
Ready
RESET# Pin Low (NOT During Embedded
Algorithms) to Read Mode (See Note)
Max
500
ns
t
RP
RESET# Pulse Width
Min
500
ns
t
RH
Reset High Time Before Read (See Note)
Min
50
ns
t
RPD
RESET# Input Low to Standby Mode (See Note)
Min
20
μs
t
RB
RY/BY# Output High to CE#, OE# pin Low
Min
0
ns
RESET#
RY/BY#
RY/BY#
t
RP
t
Ready
Reset Timings NOT during Embedded Algorithms
t
Ready
CE#, OE#
t
RH
CE#, OE#
Reset Timings during Embedded Algorithms
RESET#
t
RP
t
RB
相關(guān)PDF資料
PDF描述
S29GL256M10TFIR10 MOSFET, Switching; VDSS (V): 60; ID (A): 6; Pch : 2?3?; RDS (ON) typ. (ohm) @10V: 0.028; RDS (ON) typ. (ohm) @4V[4.5V]: [0.04]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1000; toff (µs) typ: 0.06; Package: SOP-8
S29GL256M10TFIR12 MOSFET, Switching; VDSS (V): 60; ID (A): 6; Pch : 2/3; RDS (ON) typ. (ohm) @10V: 0.028; RDS (ON) typ. (ohm) @4V[4.5V]: [0.04]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1000; toff (µs) typ: 0.06; Package: SOP-8
S29GL256M10TFIR13 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TFIR20 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TFIR22 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
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