參數(shù)資料
型號(hào): S29GL256M10TAIR23
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述: 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
封裝: MO-142EC, TSOP-56
文件頁數(shù): 137/160頁
文件大?。?/td> 2142K
代理商: S29GL256M10TAIR23
April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBit
TM
Flash Family
137
P r e l i m i n a r y
AC Characteristics
Note:
For sector group protect, A6:A0 = 0xx0010. For sector group unprotect, A6:A0 = 1xx0010.
Figure 23. Sector Group Protect and Unprotect Timing Diagram
Sector Group Protect: 150 μs,
Sector Group Unprotect: 15 ms
1 μs
RESET#
SA, A6,
A3, A2,
A1, A0
Data
CE#
WE#
OE#
60h
60h
40h
Valid*
Valid*
Valid*
Status
Sector Group Protect or Unprotect
Verify
V
ID
V
IH
相關(guān)PDF資料
PDF描述
S29GL256M10TFIR10 MOSFET, Switching; VDSS (V): 60; ID (A): 6; Pch : 2?3?; RDS (ON) typ. (ohm) @10V: 0.028; RDS (ON) typ. (ohm) @4V[4.5V]: [0.04]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1000; toff (µs) typ: 0.06; Package: SOP-8
S29GL256M10TFIR12 MOSFET, Switching; VDSS (V): 60; ID (A): 6; Pch : 2/3; RDS (ON) typ. (ohm) @10V: 0.028; RDS (ON) typ. (ohm) @4V[4.5V]: [0.04]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1000; toff (µs) typ: 0.06; Package: SOP-8
S29GL256M10TFIR13 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TFIR20 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TFIR22 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
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