參數(shù)資料
型號： S29GL256M10TAIR10
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述： 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
封裝： MO-142EC, TSOP-56
文件頁數(shù)： 24/160頁
文件大?。?/td> 2142K
代理商： S29GL256M10TAIR10
24
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00A5 April 30, 2004
P r e l i m i n a r y
Ordering Information-S29GL064M
S29GL064M Standard Products
Standard products are available in several packages and operating ranges. The
order number (Valid Combination) is formed by a combination of the following:
S29GL064M
90
T
A
I
R1
2
PACKAGE TYPE
0
= Tray
2
= 7” Tape and Reel
3
= 13” Tape and Reel
MODEL NUMBER
R0
= x8, V
CC
=3.0-3.6V, Uniform sector device
R1
= x8/x16, V
CC
=3.0-3.6V, Uniform sector device, highest address
sector protected when WP#/ACC=V
IL
R2
= x8/x16, V
CC
=3.0-3.6V, Uniform sector device, lowest address sector
protected when WP#/ACC=V
IL
R3
= x8/x16, V
CC
=3.0-3.6V, Top boot sector device, top two address
sectors protected when WP#/ACC=V
IL
R4
= x8/x16, V
CC
=3.0-3.6V, Bottom boot sector device, bottom two
address sectors protected when WP#/ACC=V
IL
R5
= x16, V
CC
=3.0-3.6V, Uniform sector device
R6
= x16, V
CC
=3.0-3.6V, Uniform sector device, highest address sector
protected when WP#=V
IL
R7
= x16, V
CC
=3.0-3.6V, Uniform sector device, lowest address sector
protected when WP#=V
IL
R8
= x8/x16, V
CC
=3.0-3.6V, Uniform sector device, highest address
sector protected when WP#/ACC=V
IL
, FPT-56P-M01 package only
R9
= x8/x16, V
CC
=3.0-3.6V, Uniform sector device, lowest address sector
protected when WP#/ACC=V
IL
, FPT-56P-M01 package only
TEMPERATURE RANGE
I
= Industrial (–40
°
C to +85
°
C)
PACKAGE MATERIAL SET
A
= Standard
F
= Pb-Free
B
= Standard
C
= Pb-Free
D
= Pb-Free
PACKAGE TYPE
T
= Thin Small Outline Package (TSOP) Standard Pinout
B
= Fine-pitch Ball-Grid Array Package
F
= Fortified Ball-Grid Array Package
SPEED OPTION
See Product Selector Guide and Valid Combinations
DEVICE NUMBER/DESCRIPTION
S29GL064M
64 Megabit Page-Mode Flash Memory Manufactured using 0.23 um MirrorBit
TM
Process Technology, 3.0 Volt-only Read, Program, and Erase
相關PDF資料
PDF描述
S29GL256M10TAIR12 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TAIR13 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TAIR20 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TAIR22 MOSFET, Switching; VDSS (V): 200; ID (A): 0.5; Pch : -; RDS (ON) typ. (ohm) @10V: 1.6; RDS (ON) typ. (ohm) @4V[4.5V]: 1.9; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 120; toff (µs) typ: -; Package: TSSOP-8
S29GL256M10TAIR23 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
相關代理商/技術參數(shù)
參數(shù)描述
S29GL256M11FAIR10 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 110ns 64-Pin Fortified BGA Tray
S29GL256M11FAIR12 制造商:Spansion 功能描述:256M (32MX8/16MX16) 3V REG, MIRRORBIT, FBGA64 IND - Trays
S29GL256M11FAIR2 制造商:Spansion 功能描述:NOR Flash, 16M x 16, 64 Pin, Plastic, BGA
S29GL256M11FAIR20 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 110ns 64-Pin Fortified BGA Tray
S29GL256M11FFIR10 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8bit/16bit 110ns 64-Pin Fortified BGA Tray 制造商:Spansion 功能描述:Flash Memory IC
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*