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參數(shù)資料
| 型號(hào)： | S29GL128P |
| 廠商： | Spansion Inc. |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 3.0伏只頁(yè)面模式閃存具有90納米MirrorBit工藝技術(shù) |
| 文件頁(yè)數(shù)： | 12/77頁(yè) |
| 文件大小： | 2121K |
| 代理商： | S29GL128P |
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12
S29GL-P MirrorBit
Flash Family
S29GL-P_00_A7 November 8, 2007
D a t a
S h e e t
( P r e l i m i n a r y )
3.
Block Diagram
Figure 3.1
S29GL-P Block Diagram
4.
Physical Dimensions/Connection Diagrams
This section shows the I/O designations and package specifications for the S29GL-P family.
4.1
Related Documents
The following documents contain information relating to the S29GL-P devices. Click on the title or go to
www.spansion.com download the PDF file, or request a copy from your sales office.
Considerations for X-ray Inspection of Surface-Mounted Flash Integrated Circuits
4.2
Special Handling Instructions for BGA Package
Special handling is required for Flash Memory products in BGA packages.
Flash memory devices in BGA packages may be damaged if exposed to ultrasonic cleaning methods. The
package and/or data integrity may be compromised if the package body is exposed to temperatures above
150°C for prolonged periods of time.
Input/Output
Buffers
X-Decoder
Y-Decoder
Chip Enable
Output Enable
Logic
Erase Voltage
Generator
PGM Voltage
Generator
Timer
V
CC
Detector
State
Control
Command
Register
V
CC
V
SS
V
IO
WE#
WP#/ACC
BYTE#
CE#
OE#
STB
STB
DQ15
–
DQ0
Sector Switches
RY/BY#
RESET#
Data
Latch
Y-Gating
Cell Matrix
A
A
Max
**–A0 (A-1)
** A
Max
GL01GP=A25, A
Max
GL512P = A24, A
Max
GL256P = A23, A
Max
GL128P = A22
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL128P10FAI010 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P10FAI012 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P10FAIR10 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P10FAIR12 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P10FAIV10 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL128P10FAI010 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 100NS 64BGA - Trays 制造商:Spansion 功能描述:SPZS29GL128P10FAI010 IC 128M PAGE-MODE F |
| S29GL128P10FAI020 | 制造商:Spansion 功能描述: 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 100NS 64BGA - Trays 制造商:Spansion 功能描述:SPZS29GL128P10FAI020 IC 128M FLASH BGA |
| S29GL128P10FAI022 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 100NS 64BGA - Tape and Reel |
| S29GL128P10FAIR20 | 制造商:Spansion 功能描述: |
| S29GL128P10FFI010 | 功能描述:閃存 128Mb 3V 110ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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